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3.6A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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IRFBC30
STMicroelectronics
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Datasheet
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IRFBC30
STMicroelectronics
3.6A, 600V, 2.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | STMICROELECTRONICS | |
Part Package Code | TO-220AB | |
Package Description | TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Samacsys Manufacturer | STMicroelectronics | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 300 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 3.6 A | |
Drain-source On Resistance-Max | 2.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 50 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 100 W | |
Power Dissipation-Max (Abs) | 74 W | |
Pulsed Drain Current-Max (IDM) | 14 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-on Time-Max (ton) | 102 ns |
This table gives cross-reference parts and alternative options found for IRFBC30. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC30, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFBC30PBF | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | IRFBC30 vs IRFBC30PBF |
SIHFBC30 | TRANSISTOR 3.6 A, 600 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN, FET General Purpose Power | Vishay Siliconix | IRFBC30 vs SIHFBC30 |
BUK455-600B | TRANSISTOR 4 A, 600 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power | NXP Semiconductors | IRFBC30 vs BUK455-600B |
IRFBC30PBF | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFBC30 vs IRFBC30PBF |
IRFBC30 | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Vishay Intertechnologies | IRFBC30 vs IRFBC30 |