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Transistors Power Field-Effect Transistors IRFBE20PBF

Transistors
IRFBE20PBF
Description: Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3

Overview of IRFBE20PBF by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBE20PBF by International Rectifier

Part # Manufacturer Description Stock Price Buy
Quest Components 1.8A, 800V, 6.5OHM, N-CHANNEL, SI, POWER, MOSFET, TO-220AB 468
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Part Data Attributes for IRFBE20PBF by International Rectifier
Parametric Data

IRFBE20PBF
International Rectifier
Buy Now
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Part Package Code
TO-220AB
Package Description
FLANGE MOUNT, R-PSFM-T3
Pin Count
3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
180 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
800 V
Drain Current-Max (ID)
1.8 A
Drain-source On Resistance-Max
6.5 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Peak Reflow Temperature (Cel)
250
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
54 W
Power Dissipation-Max (Abs)
54 W
Pulsed Drain Current-Max (IDM)
7.2 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFBE20PBF
    International Rectifier
    Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3
    VS

Alternate Parts for IRFBE20PBF

This table gives cross-reference parts and alternative options found for IRFBE20PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBE20PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
2SK952 Power Field-Effect Transistor, 2.5A I(D), 800V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fuji Electric Co Ltd IRFBE20PBF vs 2SK952
IRFBE20 Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBE20PBF vs IRFBE20
IRFBE20PBF Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRFBE20PBF vs IRFBE20PBF
BUZ78 Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRFBE20PBF vs BUZ78
Part Number Description Manufacturer Compare
BUZ78 Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Siemens IRFBE20PBF vs BUZ78
APT6020LVR Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation IRFBE20PBF vs APT6020LVR
APT6020LVRG Power Field-Effect Transistor, 30A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN Microsemi Corporation IRFBE20PBF vs APT6020LVRG
IRFBE20 Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBE20PBF vs IRFBE20

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