Datasheets
IRFD420PBF by:

Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4

Part Details for IRFD420PBF by Vishay Intertechnologies

Overview of IRFD420PBF by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFD420PBF

Part # Distributor Description Stock Price Buy
DISTI # IRFD420PBF
Avnet Americas Trans MOSFET N-CH 500V 0.37A 4-Pin HVMDIP - Tape and Reel (Alt: IRFD420PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.0290
  • 5,000 $0.9960
  • 10,000 $0.9630
  • 15,000 $0.9240
  • 20,000 $0.8940
  • 25,000 $0.8520
  • 250,000 $0.8100
$0.8100 / $1.0290 Buy Now
DISTI # 844-IRFD420PBF
Mouser Electronics MOSFET 500V N-CH HEXFET HEXDI RoHS: Compliant 477
  • 1 $1.8300
  • 10 $1.5200
  • 100 $1.2100
  • 500 $1.0800
  • 1,000 $0.9760
  • 2,500 $0.8050
  • 5,000 $0.7750
  • 10,000 $0.7500
$0.7500 / $1.8300 Buy Now
DISTI # 70078896
RS Power MOSFET, N-Ch, VDSS 500V, RDS(ON) 3Ohms, ID 0.37A, HD-1,PD 1W, VGS+/-20V, Qg 24nC | Vishay PCS IRFD420PBF RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk 0
  • 2,500 $0.9600
  • 25,000 $0.9100
  • 125,000 $0.8600
  • 250,000 $0.8100
$0.8100 / $0.9600 RFQ
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 0
  • 2,500 $0.8000
$0.8000 Buy Now
DISTI # IRFD420PBF
TTI MOSFET 500V N-CH HEXFET HEXDI RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 50 Container: Tube Americas - 0
  • 2,500 $0.7900
  • 5,000 $0.7700
  • 10,000 $0.7500
$0.7500 / $0.7900 Buy Now
DISTI # IRFD420PBF
Avnet Americas Trans MOSFET N-CH 500V 0.37A 4-Pin HVMDIP - Tape and Reel (Alt: IRFD420PBF) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $1.0290
  • 5,000 $0.9960
  • 10,000 $0.9630
  • 15,000 $0.9240
  • 20,000 $0.8940
  • 25,000 $0.8520
  • 250,000 $0.8100
$0.8100 / $1.0290 Buy Now
DISTI # IRFD420PBF
TME Transistor: N-MOSFET, unipolar, 500V, 0.23A, 1W, DIP4 Min Qty: 1 581
  • 1 $0.7550
  • 5 $0.6730
  • 25 $0.5940
  • 100 $0.5340
  • 500 $0.4980
$0.4980 / $0.7550 Buy Now
DISTI # IRFD420PBF
EBV Elektronik Trans MOSFET N-CH 500V 0.37A 4-Pin HVMDIP (Alt: IRFD420PBF) RoHS: Compliant Min Qty: 100 Package Multiple: 100 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 2646352
Farnell MOSFET, N-CH, 500V, 0.37A, HVMDIP RoHS: Compliant Min Qty: 2500 Lead time: 15 Weeks, 1 Days Container: Each 0
  • 2,500 $0.8221
$0.8221 Buy Now
New Advantage Corporation Hexfet (IR) RoHS: Compliant Min Qty: 1 Package Multiple: 100 700
  • 100 $0.5660
$0.5660 Buy Now

Part Details for IRFD420PBF

IRFD420PBF CAD Models

IRFD420PBF Part Data Attributes:

IRFD420PBF Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
IRFD420PBF Vishay Intertechnologies Power Field-Effect Transistor, 0.37A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, DIP-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code DIP
Package Description IN-LINE, R-PDIP-T3
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 18 Weeks
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 51 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 0.37 A
Drain-source On Resistance-Max 3 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1 W
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

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