Datasheets
IRFF9132 by:

Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205

Part Details for IRFF9132 by Vishay Siliconix

Overview of IRFF9132 by Vishay Siliconix

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Price & Stock for IRFF9132

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 2 14
  • 2 $3.0000
  • 8 $2.2500
$2.2500 / $3.0000 Buy Now
Quest Components   11
  • 1 $4.0000
  • 2 $3.0000
  • 9 $2.5000
$2.5000 / $4.0000 Buy Now
Quest Components   1
  • 1 $3.0306
$3.0306 Buy Now

Part Details for IRFF9132

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IRFF9132 Part Data Attributes

IRFF9132 Vishay Siliconix
Buy Now Datasheet
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IRFF9132 Vishay Siliconix Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-205
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRFF9132

This table gives cross-reference parts and alternative options found for IRFF9132. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF9132, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFF9132 Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF9132 vs IRFF9132
IRFF9132 5.5A, 100V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF9132 vs IRFF9132
IRFF9132 Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier IRFF9132 vs IRFF9132
Part Number Description Manufacturer Compare
2N6849-JQR-BR1 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF9132 vs 2N6849-JQR-BR1
JANTX2N6849 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF9132 vs JANTX2N6849
IRFF9130-QR-BR1 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF9132 vs IRFF9130-QR-BR1
IRFP9131 Power Field-Effect Transistor, 12A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFF9132 vs IRFP9131
2N6849-JQRR1 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRFF9132 vs 2N6849-JQRR1
IRFF9133 5.5A, 80V, 0.4ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Intersil Corporation IRFF9132 vs IRFF9133
IRFF9130 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF Rochester Electronics LLC IRFF9132 vs IRFF9130
2N6849 6.5A, 100V, 0.3ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF9132 vs 2N6849
IRFF9130-JQR-BE1 Power Field-Effect Transistor, 6.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, METAL, TO-39, 3 PIN TT Electronics Resistors IRFF9132 vs IRFF9130-JQR-BE1
IRFF9132 Power Field-Effect Transistor, 5.5A I(D), 100V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF9132 vs IRFF9132

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