Part Details for IRFH4251DTRPBF by Infineon Technologies AG
Overview of IRFH4251DTRPBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IRFH4251DTRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
19X2758
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Newark | Mosfet, Dual N Channel, 25V, 188A, Pqfn-10, Channel Type:N Channel, Drain Source Voltage Vds N Channel:25V, Drain Source Voltage Vds P Channel:25V, Continuous Drain Current Id N Channel:188A, No. Of Pins:10Pins, Qualification:- Rohs Compliant: Yes |Infineon IRFH4251DTRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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Buy Now | |
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DISTI #
80308623
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Verical | Trans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R Min Qty: 4000 Package Multiple: 4000 Date Code: 2121 | Americas - 28000 |
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$1.0339 / $1.2161 | Buy Now |
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DISTI #
80307540
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Verical | Trans MOSFET N-CH 25V 64A/188A 8-Pin PQFN EP T/R Min Qty: 4000 Package Multiple: 4000 Date Code: 1838 | Americas - 24000 |
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$0.9707 / $1.1417 | Buy Now |
Part Details for IRFH4251DTRPBF
IRFH4251DTRPBF CAD Models
IRFH4251DTRPBF Part Data Attributes
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IRFH4251DTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH4251DTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 25V, 0.0046ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, H, QFN-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 53 Weeks, 4 Days | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | SOURCE | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.0046 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 63 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |