Datasheets
IRFH5006TRPBF by:

Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

Part Details for IRFH5006TRPBF by Infineon Technologies AG

Overview of IRFH5006TRPBF by Infineon Technologies AG

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Applications Industrial Automation Energy and Power Systems Renewable Energy Motor control systems

Price & Stock for IRFH5006TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 74R1471
Newark Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Power Dissipation:3.6W Rohs Compliant: Yes |Infineon IRFH5006TRPBF Min Qty: 4000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
DISTI # 74R1470
Newark Mosfet Transistor, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Power Dissipation:3.6W Rohs Compliant: Yes |Infineon IRFH5006TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
Buy Now
DISTI # 70019264
RS MOSFET, 60V, 100A, 4.1mOhm, 67 nC Qg, PQFN5x6 | Infineon IRFH5006TRPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $2.1600
  • 25 $2.0600
  • 50 $1.9400
  • 500 $1.8300
  • 1,250 $1.7300
$1.7300 / $2.1600 RFQ
Quest Components   1876
  • 1 $2.7944
  • 662 $0.8733
  • 1,146 $0.7685
$0.7685 / $2.7944 Buy Now
DISTI # IRFH5006TRPBF
TME Transistor: N-MOSFET, unipolar, 60V, 21A, 250W, PQFN5X6 Min Qty: 4000 0
  • 4,000 $0.8100
$0.8100 RFQ
Ameya Holding Limited   Min Qty: 4000 245
  • 4,000 $1.6293
  • 20,000 $1.5803
$1.5803 / $1.6293 Buy Now
DISTI # 2577172
element14 Asia-Pacific MOSFET, N-CH, 60V, 21A, PQFN-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape 0
  • 1 $2.1430
  • 10 $1.9081
  • 100 $1.5338
  • 500 $1.5118
  • 1,000 $1.4825
$1.4825 / $2.1430 Buy Now
DISTI # 2577172RL
element14 Asia-Pacific MOSFET, N-CH, 60V, 21A, PQFN-8 RoHS: Compliant Min Qty: 100 Container: Reel 0
  • 100 $1.5338
  • 500 $1.5118
  • 1,000 $1.4825
$1.4825 / $1.5338 Buy Now
DISTI # 2577228
element14 Asia-Pacific MOSFET, N-CH, 60V, 21A, PQFN-8 RoHS: Compliant Min Qty: 4000 Container: Reel 0
  • 4,000 $2.3778
  • 12,000 $1.9595
$1.9595 / $2.3778 Buy Now
DISTI # 2577172
Farnell MOSFET, N-CH, 60V, 21A, PQFN-8 RoHS: Compliant Min Qty: 1 Lead time: 25 Weeks, 1 Days Container: Cut Tape 0
  • 1 $2.3103
  • 10 $1.7858
  • 25 $1.5985
  • 100 $1.4111
$1.4111 / $2.3103 Buy Now
DISTI # 2577172RL
Farnell MOSFET, N-CH, 60V, 21A, PQFN-8 RoHS: Compliant Min Qty: 100 Lead time: 25 Weeks, 1 Days Container: Reel 0
  • 100 $1.4111
$1.4111 Buy Now
DISTI # 2577228
Farnell MOSFET, N-CH, 60V, 21A, PQFN-8 RoHS: Compliant Min Qty: 4000 Lead time: 25 Weeks, 1 Days Container: Reel 0
  • 4,000 $1.1576
  • 12,000 $1.1339
$1.1339 / $1.1576 Buy Now
Win Source Electronics MOSFET N-CH 60V 100A 8-PQFN 42100
  • 30 $1.6960
  • 75 $1.3920
  • 115 $1.3480
  • 155 $1.3050
  • 200 $1.2610
  • 270 $1.1310
$1.1310 / $1.6960 Buy Now

Part Details for IRFH5006TRPBF

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IRFH5006TRPBF Part Data Attributes

IRFH5006TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFH5006TRPBF Infineon Technologies AG Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 52 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 285 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 21 A
Drain-source On Resistance-Max 0.0041 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFH5006TRPBF

This table gives cross-reference parts and alternative options found for IRFH5006TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFH5006TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier IRFH5006TRPBF vs IRFH5006TRPBF
IRFH5006TR2PBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier IRFH5006TRPBF vs IRFH5006TR2PBF
CSD18532NQ5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments IRFH5006TRPBF vs CSD18532NQ5BT
Part Number Description Manufacturer Compare
IRFH5006TRPBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier IRFH5006TRPBF vs IRFH5006TRPBF
IRFH5006TR2PBF Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier IRFH5006TRPBF vs IRFH5006TR2PBF
CSD18532NQ5BT 60-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 3.4 mOhm 8-VSON-CLIP -55 to 150 Texas Instruments IRFH5006TRPBF vs CSD18532NQ5BT

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