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Power Field-Effect Transistor, 10A I(D), 100V, 0.0149ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
91Y4695
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Newark | Mosfet, N-Ch, 100V, 55A, Pqfn, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:55A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Qualification:-Rohs Compliant: Yes |Infineon IRFH5210TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3085 |
|
$0.7700 / $1.1500 | Buy Now |
DISTI #
IRFH5210TRPBFCT-ND
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DigiKey | MOSFET N-CH 100V 10A/55A 8PQFN Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
4871 In Stock |
|
$0.5989 / $1.5900 | Buy Now |
DISTI #
IRFH5210TRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH5210TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 4000 |
|
$0.5579 / $0.6376 | Buy Now |
DISTI #
942-IRFH5210TRPBF
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Mouser Electronics | MOSFET 100V 1 N-CH HEXFET 14.9mOhms 39nC RoHS: Compliant | 10424 |
|
$0.5980 / $1.5800 | Buy Now |
DISTI #
E02:0323_01379807
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Arrow Electronics | Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Date Code: 2409 | Europe - 4000 |
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$0.5790 / $0.6009 | Buy Now |
DISTI #
70019278
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RS | MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6 | Infineon IRFH5210TRPBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
|
$1.3400 / $1.5800 | RFQ |
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Future Electronics | Single N-Channel 100 V 14.9 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 8000Reel |
|
$0.8500 | Buy Now |
|
Future Electronics | Single N-Channel 100 V 14.9 mOhm 39 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Container: Reel | 0Reel |
|
$0.8500 | Buy Now |
DISTI #
73576833
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Verical | Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R Min Qty: 23 Package Multiple: 1 Date Code: 2304 | Americas - 11950 |
|
$0.6038 / $1.0850 | Buy Now |
DISTI #
78970766
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Verical | Trans MOSFET N-CH 100V 10A 8-Pin PQFN EP T/R Min Qty: 4000 Package Multiple: 4000 | Americas - 4000 |
|
$0.5777 / $0.5996 | Buy Now |
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IRFH5210TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFH5210TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 10A I(D), 100V, 0.0149ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PDSO-N5 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 86 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 0.0149 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N5 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 5 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 104 W | |
Pulsed Drain Current-Max (IDM) | 220 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |