Datasheets
IRFH7004TRPBF by:

Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, B, QFN-8

Part Details for IRFH7004TRPBF by Infineon Technologies AG

Overview of IRFH7004TRPBF by Infineon Technologies AG

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Price & Stock for IRFH7004TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 55W4108
Newark Mosfet, N-Ch, 40V, 100A, 150Deg C, 156W, Channel Type:N Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:100A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon IRFH7004TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 17354
  • 1 $1.6100
  • 10 $1.3600
  • 100 $1.0900
  • 500 $0.9090
  • 1,000 $0.7390
  • 2,500 $0.7130
  • 12,000 $0.6870
$0.6870 / $1.6100 Buy Now
DISTI # IRFH7004TRPBF
Avnet Americas Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH7004TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.5535
  • 8,000 $0.5491
  • 16,000 $0.5446
  • 24,000 $0.5402
  • 32,000 $0.5358
$0.5358 / $0.5535 Buy Now
DISTI # IRFH7004TRPBF
Avnet Americas Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R - Tape and Reel (Alt: IRFH7004TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 4,000 $0.5513
  • 8,000 $0.5444
  • 16,000 $0.5378
  • 24,000 $0.5313
  • 32,000 $0.5250
$0.5250 / $0.5513 Buy Now
DISTI # 70394764
RS IRFH7004TRPBF N-channel MOSFET Transistor, 100 A, 40 V, 8-Pin PQFN | Infineon IRFH7004TRPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $0.8400
  • 10 $0.8000
  • 50 $0.7600
  • 100 $0.7200
$0.7200 / $0.8400 RFQ
Rochester Electronics IRFH7004 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 12710
  • 1 $0.7350
  • 25 $0.7203
  • 100 $0.6909
  • 500 $0.6615
  • 1,000 $0.6248
$0.6248 / $0.7350 Buy Now
Ameya Holding Limited Single N-Channel 40 V 1.4 mOhm 129 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm 2596
RFQ
Chip Stock   3820
RFQ
DISTI # C1S322000489914
Chip1Stop Trans MOSFET N-CH Si 40V 259A 8-Pin PQFN EP T/R RoHS: Compliant Container: Cut Tape 13884
  • 1 $1.4800
  • 10 $0.9520
  • 50 $0.9040
  • 100 $0.6430
  • 200 $0.6190
  • 500 $0.5180
  • 1,000 $0.5000
  • 2,000 $0.4970
  • 4,000 $0.4780
$0.4780 / $1.4800 Buy Now
DISTI # SP001570954
EBV Elektronik Trans MOSFET N-CH 40V 259A 8-Pin PQFN EP T/R (Alt: SP001570954) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 17 Weeks, 0 Days EBV - 0
Buy Now
LCSC 40V 100A 1.1m10V100A 156W 2.2V150uA 1 N-channel PQFN-8(4.9x5.8) MOSFETs ROHS 1696
  • 1 $1.0564
  • 10 $0.8942
  • 30 $0.8061
  • 100 $0.7053
  • 500 $0.5132
  • 1,000 $0.4944
$0.4944 / $1.0564 Buy Now
Win Source Electronics MOSFET N CH 40V 100A PQFN 5X6 50650
  • 100 $0.5239
  • 205 $0.4901
  • 320 $0.4732
  • 460 $0.4394
  • 595 $0.4225
  • 740 $0.4056
$0.4056 / $0.5239 Buy Now

Part Details for IRFH7004TRPBF

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IRFH7004TRPBF Part Data Attributes

IRFH7004TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFH7004TRPBF Infineon Technologies AG Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, B, QFN-8
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 191 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-N5
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 5
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 156 W
Pulsed Drain Current-Max (IDM) 1247 A
Surface Mount YES
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

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