There are no models available for this part yet.
Overview of IRFHM792TR2PBF by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 1 option )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Energy and Power Systems
Renewable Energy
Price & Stock for IRFHM792TR2PBF by International Rectifier
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 2.3A I(D), 100V, 0.195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ |
CAD Models for IRFHM792TR2PBF by International Rectifier
Part Data Attributes for IRFHM792TR2PBF by International Rectifier
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|---|---|
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Pbfree Code
|
Yes
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Rohs Code
|
Yes
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Part Life Cycle Code
|
Obsolete
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Ihs Manufacturer
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INTERNATIONAL RECTIFIER CORP
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Part Package Code
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QFN
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Package Description
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3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
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Pin Count
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8
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Avalanche Energy Rating (Eas)
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10.2 mJ
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Case Connection
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DRAIN
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Configuration
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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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100 V
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Drain Current-Max (ID)
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2.3 A
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Drain-source On Resistance-Max
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0.195 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JESD-30 Code
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S-PDSO-N8
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JESD-609 Code
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e3
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Moisture Sensitivity Level
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1
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Number of Elements
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2
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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SQUARE
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Package Style
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SMALL OUTLINE
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Polarity/Channel Type
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N-CHANNEL
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Power Dissipation-Max (Abs)
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10.4 W
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Pulsed Drain Current-Max (IDM)
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14 A
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Surface Mount
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YES
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Terminal Finish
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MATTE TIN
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Terminal Form
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NO LEAD
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Terminal Position
|
DUAL
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Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
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Alternate Parts for IRFHM792TR2PBF
This table gives cross-reference parts and alternative options found for IRFHM792TR2PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFHM792TR2PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFHM792TRPBF | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 | International Rectifier | IRFHM792TR2PBF vs IRFHM792TRPBF |