Datasheets
IRFHM8363TRPBF by:

Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8

Part Details for IRFHM8363TRPBF by International Rectifier

Overview of IRFHM8363TRPBF by International Rectifier

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Part Details for IRFHM8363TRPBF

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IRFHM8363TRPBF Part Data Attributes

IRFHM8363TRPBF International Rectifier
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IRFHM8363TRPBF International Rectifier Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code QFN
Package Description SMALL OUTLINE, S-PDSO-N8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 29 mJ
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.0149 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code S-PDSO-N8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 19 W
Pulsed Drain Current-Max (IDM) 116 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form NO LEAD
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFHM8363TRPBF

This table gives cross-reference parts and alternative options found for IRFHM8363TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFHM8363TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFHM8363TR2PBF Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier IRFHM8363TRPBF vs IRFHM8363TR2PBF
Part Number Description Manufacturer Compare
IRFHM8363TR2PBF Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3.30 X 3.30 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8 International Rectifier IRFHM8363TRPBF vs IRFHM8363TR2PBF

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