Part Details for IRFIBF30G by International Rectifier
Overview of IRFIBF30G by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFIBF30G
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 14 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SOT-186 | 342 |
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$2.0520 / $5.1300 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SOT-186 | 66 |
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$4.2180 / $6.8400 | Buy Now |
Part Details for IRFIBF30G
IRFIBF30G CAD Models
IRFIBF30G Part Data Attributes:
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IRFIBF30G
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFIBF30G
International Rectifier
Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-220AB | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 220 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 900 V | |
| Drain Current-Max (ID) | 1.9 A | |
| Drain-source On Resistance-Max | 3.7 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 35 W | |
| Power Dissipation-Max (Abs) | 35 W | |
| Pulsed Drain Current-Max (IDM) | 7.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFIBF30G
This table gives cross-reference parts and alternative options found for IRFIBF30G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFIBF30G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFIBF30GPBF | Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | Vishay Intertechnologies | IRFIBF30G vs IRFIBF30GPBF |
| IRFIBF30GPBF | Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | IRFIBF30G vs IRFIBF30GPBF |
| IRFIBF30GPBF | Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, PLASTIC, TO-220, FULLPAK-3 | Vishay Siliconix | IRFIBF30G vs IRFIBF30GPBF |