Part Details for IRFK2D450 by International Rectifier
Overview of IRFK2D450 by International Rectifier
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (5 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRFK2D450
IRFK2D450 CAD Models
IRFK2D450 Part Data Attributes
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IRFK2D450
International Rectifier
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Datasheet
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IRFK2D450
International Rectifier
Power Field-Effect Transistor, 22A I(D), 500V, 0.2ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Package Description | FLANGE MOUNT, R-PUFM-X7 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | ISOLATED | |
Configuration | COMPLEX | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 22 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-240AA | |
JESD-30 Code | R-PUFM-X7 | |
Number of Elements | 4 | |
Number of Terminals | 7 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 500 W | |
Power Dissipation-Max (Abs) | 500 W | |
Pulsed Drain Current-Max (IDM) | 88 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFK2D450
This table gives cross-reference parts and alternative options found for IRFK2D450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFK2D450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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PM50502C | 0.12ohm, POWER, FET | Renesas Electronics Corporation | IRFK2D450 vs PM50502C |
IRFK4H450 | Power Field-Effect Transistor, 44A I(D), 500V, 0.1ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-240AA | International Rectifier | IRFK2D450 vs IRFK4H450 |
MG50G2YM1 | TRANSISTOR 50 A, 450 V, 0.14 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-108A1A, 7 PIN, FET General Purpose Power | Toshiba America Electronic Components | IRFK2D450 vs MG50G2YM1 |
PM50502C | Power Field-Effect Transistor, 0.12ohm, 2-Element, Metal-oxide Semiconductor FET | Hitachi Ltd | IRFK2D450 vs PM50502C |
MG50G2DM1 | TRANSISTOR 50 A, 450 V, 0.14 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, 2-108B1A, 8 PIN, FET General Purpose Power | Toshiba America Electronic Components | IRFK2D450 vs MG50G2DM1 |