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Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
25T5496
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Newark | N Channel Mosfet, 25V, 5.8A, 3-Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:5.8A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.7V Rohs Compliant: Yes |Infineon IRFML8244TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8064 |
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$0.1070 | Buy Now |
DISTI #
IRFML8244TRPBF
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Avnet Americas | Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRFML8244TRPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 9000 |
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$0.0585 / $0.0614 | Buy Now |
DISTI #
25T5496
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Avnet Americas | Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 25T5496) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 1 Days Container: Ammo Pack | 819 Partner Stock |
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$0.1760 / $0.4340 | Buy Now |
DISTI #
IRFML8244TRPBF
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Avnet Americas | Trans MOSFET N-CH 25V 5.8A 3-Pin SOT-23 T/R - Tape and Reel (Alt: IRFML8244TRPBF) RoHS: Compliant Min Qty: 9000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.0597 / $0.0616 | Buy Now |
DISTI #
70411466
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RS | N-channel MOSFET Transistor, 5.8 A, 25 V, 3-Pin SOT-23 | Infineon IRFML8244TRPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 3380 |
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$0.2850 / $0.4070 | Buy Now |
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Bristol Electronics | 1467 |
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RFQ | ||
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Bristol Electronics | 1110 |
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RFQ | ||
DISTI #
IRFML8244TRPBF
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TME | Transistor: N-MOSFET, unipolar, 25V, 5.8A, 1.25W, SOT23 Min Qty: 1 | 6599 |
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$0.0760 / $0.3120 | Buy Now |
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ComSIT USA | HEXFET Power MOSFET Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB RoHS: Compliant |
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RFQ | |
DISTI #
C1S322000491724
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 47741 |
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$0.0607 / $0.0630 | Buy Now |
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IRFML8244TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFML8244TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, MICRO-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 19 Weeks, 1 Day | |
Samacsys Manufacturer | Infineon | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 5.8 A | |
Drain-source On Resistance-Max | 0.024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 49 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.25 W | |
Power Dissipation-Max (Abs) | 1.25 W | |
Pulsed Drain Current-Max (IDM) | 24 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |