Part Details for IRFN9240 by Infineon Technologies AG
Overview of IRFN9240 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFN9240
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | Single P-Channel 200 V 125 W 60 nC Hexfet Power Mosfet Surface Mount - SMD-1 RoHS: Non Compliant pbFree: No Min Qty: 100 Package Multiple: 1 Container: Box | 0Box |
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$181.1600 | Buy Now |
Part Details for IRFN9240
IRFN9240 CAD Models
IRFN9240 Part Data Attributes:
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IRFN9240
Infineon Technologies AG
Buy Now
Datasheet
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IRFN9240
Infineon Technologies AG
Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 500 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 11 A | |
| Drain-source On Resistance-Max | 0.52 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 75 W | |
| Pulsed Drain Current-Max (IDM) | 44 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | MIL-19500/595 | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFN9240
This table gives cross-reference parts and alternative options found for IRFN9240. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFN9240, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFN9240-JQR-B | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Resistors | IRFN9240 vs IRFN9240-JQR-B |
| IRFN9240PBF | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | International Rectifier | IRFN9240 vs IRFN9240PBF |
| IRFN9240 | 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN9240 vs IRFN9240 |
| IRFN9240 | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | International Rectifier | IRFN9240 vs IRFN9240 |
| IRFN9240R4 | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Resistors | IRFN9240 vs IRFN9240R4 |
| IRFN9240 | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Resistors | IRFN9240 vs IRFN9240 |
| JANS2N7237U | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN | International Rectifier | IRFN9240 vs JANS2N7237U |
| IRFN9240-JQR-BR4 | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Resistors | IRFN9240 vs IRFN9240-JQR-BR4 |
| IRFN9240-JQR-BR4 | 11A, 200V, 0.5ohm, P-CHANNEL, Si, POWER, MOSFET, TO-276AB, CERAMIC, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRFN9240 vs IRFN9240-JQR-BR4 |
| JANTXV2N7237U | Power Field-Effect Transistor, 11A I(D), 200V, 0.52ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN | International Rectifier | IRFN9240 vs JANTXV2N7237U |