-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP064NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
63J6841
|
Newark | N Channel Mosfet, 55V, 110A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:110A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFP064NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 183376 |
|
$1.0300 | Buy Now |
DISTI #
70017032
|
RS | MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.008Ohm, ID 110A, TO-247AC, PD 200W, VGS +/-20V | Infineon IRFP064NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
|
$2.1700 / $2.8900 | RFQ |
|
Rochester Electronics | IRFP064 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 250 |
|
$1.2100 / $1.4200 | Buy Now |
DISTI #
IRFP064NPBF
|
TME | Transistor: N-MOSFET, unipolar, 55V, 98A, 150W, TO247AC Min Qty: 1 | 52 |
|
$1.0200 / $1.8300 | Buy Now |
DISTI #
C1S322000491797
|
Chip1Stop | Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant Container: Tube | 660 |
|
$0.8300 / $0.8430 | Buy Now |
|
CHIPMALL.COM LIMITED | 55V 110A 0.008@10V,59A 200W 2V@250uA 1 N-Channel TO-247AC-3 MOSFETs ROHS | 5860 |
|
$0.5417 / $0.6311 | Buy Now |
|
CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2017 Date Code: 2017 | 47 |
|
$1.0230 / $1.1000 | Buy Now |
DISTI #
SP001554926
|
EBV Elektronik | Transistor MOSFET N-CH 55V 98A 3-Pin TO-247AC Tube (Alt: SP001554926) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 9 Weeks, 0 Days | EBV - 800 |
|
Buy Now | |
|
LCSC | 55V 110A 0.00810V59A 200W 2V250uA 1 N-channel TO-247AC-3 MOSFETs ROHS | 6030 |
|
$0.5844 / $1.2019 | Buy Now |
|
New Advantage Corporation | Single N-Channel 55 V 8 mOhm 32 nC HEXFET� Power Mosfet - TO-247-3AC RoHS: Compliant Min Qty: 1 Package Multiple: 400 | 800 |
|
$1.1200 / $1.2100 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFP064NPBF
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
IRFP064NPBF
Infineon Technologies AG
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 14 Weeks, 5 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 480 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 110 A | |
Drain-source On Resistance-Max | 0.008 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 390 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFP064NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP064NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IRFP064N | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | IRFP064NPBF vs IRFP064N |