Datasheets
IRFP064NPBF by:

Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRFP064NPBF by Infineon Technologies AG

Results Overview of IRFP064NPBF by Infineon Technologies AG

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IRFP064NPBF Information

IRFP064NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFP064NPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J6841
Newark N Channel Mosfet, 55V, 110A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:55V, Continuous Drain Current Id:110A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFP064NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 183376
  • 1 $1.0300
  • 10 $1.0300
  • 100 $1.0300
  • 500 $1.0300
  • 1,600 $1.0300
  • 3,200 $1.0300
  • 5,600 $1.0300
$1.0300 Buy Now
DISTI # 70017032
RS MOSFET, Power, N-Ch, VDSS 55V, RDS(ON) 0.008Ohm, ID 110A, TO-247AC, PD 200W, VGS +/-20V | Infineon IRFP064NPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $2.8900
  • 5 $2.6500
  • 10 $2.5400
  • 100 $2.3100
  • 250 $2.1700
$2.1700 / $2.8900 RFQ
Rochester Electronics IRFP064 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 250
  • 1 $1.4200
  • 25 $1.3900
  • 100 $1.3300
  • 500 $1.2800
  • 1,000 $1.2100
$1.2100 / $1.4200 Buy Now
DISTI # IRFP064NPBF
TME Transistor: N-MOSFET, unipolar, 55V, 98A, 150W, TO247AC Min Qty: 1 52
  • 1 $1.8300
  • 5 $1.5300
  • 25 $1.3700
  • 100 $1.2800
  • 250 $1.2200
  • 500 $1.1000
  • 1,000 $1.0200
$1.0200 / $1.8300 Buy Now
DISTI # C1S322000491797
Chip1Stop Trans MOSFET N-CH 55V 110A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant Container: Tube 660
  • 1 $0.8430
  • 10 $0.8400
  • 50 $0.8360
  • 100 $0.8340
  • 200 $0.8320
  • 500 $0.8300
$0.8300 / $0.8430 Buy Now
CHIPMALL.COM LIMITED 55V 110A 0.008@10V,59A 200W 2V@250uA 1 N-Channel TO-247AC-3 MOSFETs ROHS 5860
  • 1 $0.6311
  • 10 $0.5814
  • 30 $0.5715
  • 100 $0.5417
$0.5417 / $0.6311 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2017 Date Code: 2017 47
  • 1 $1.1000
  • 10 $1.0700
  • 50 $1.0500
  • 100 $1.0300
  • 500 $1.0250
  • 1,000 $1.0230
$1.0230 / $1.1000 Buy Now
DISTI # SP001554926
EBV Elektronik Transistor MOSFET N-CH 55V 98A 3-Pin TO-247AC Tube (Alt: SP001554926) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 9 Weeks, 0 Days EBV - 800
Buy Now
LCSC 55V 110A 0.00810V59A 200W 2V250uA 1 N-channel TO-247AC-3 MOSFETs ROHS 6030
  • 1 $1.2019
  • 10 $1.0377
  • 25 $0.7518
  • 100 $0.6507
  • 400 $0.6049
  • 800 $0.5844
$0.5844 / $1.2019 Buy Now
New Advantage Corporation Single N-Channel 55 V 8 mOhm 32 nC HEXFET� Power Mosfet - TO-247-3AC RoHS: Compliant Min Qty: 1 Package Multiple: 400 800
  • 400 $1.2100
  • 800 $1.1200
$1.1200 / $1.2100 Buy Now
Win Source Electronics MOSFET N-CH 55V 110A TO-247AC 62640
  • 80 $0.6549
  • 165 $0.6127
  • 255 $0.5916
  • 365 $0.5493
  • 475 $0.5282
  • 595 $0.5071
$0.5071 / $0.6549 Buy Now

Part Details for IRFP064NPBF

IRFP064NPBF CAD Models

IRFP064NPBF Part Data Attributes

IRFP064NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFP064NPBF Infineon Technologies AG Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 14 Weeks, 5 Days
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
Avalanche Energy Rating (Eas) 480 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 110 A
Drain-source On Resistance-Max 0.008 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Pulsed Drain Current-Max (IDM) 390 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP064NPBF

This table gives cross-reference parts and alternative options found for IRFP064NPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP064NPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP064N Infineon Technologies AG Check for Price Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN IRFP064NPBF vs IRFP064N

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