Datasheets
IRFP23N50L by:

Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN

Part Details for IRFP23N50L by Vishay Intertechnologies

Overview of IRFP23N50L by Vishay Intertechnologies

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFP23N50L

Part # Distributor Description Stock Price Buy
DISTI # IRFP23N50L
Avnet Americas Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRFP23N50L) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Container: Bulk 0
RFQ
DISTI # IRFP23N50L
Avnet Americas Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRFP23N50L) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Container: Bulk 0
RFQ
DISTI # IRFP23N50L
Avnet Americas Trans MOSFET N-CH 500V 23A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: IRFP23N50L) RoHS: Not Compliant Min Qty: 500 Package Multiple: 500 Container: Bulk 0
RFQ

Part Details for IRFP23N50L

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IRFP23N50L Part Data Attributes

IRFP23N50L Vishay Intertechnologies
Buy Now Datasheet
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IRFP23N50L Vishay Intertechnologies Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN
Pbfree Code No
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Part Package Code TO-247AC
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 410 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.235 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 370 W
Pulsed Drain Current-Max (IDM) 92 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP23N50L

This table gives cross-reference parts and alternative options found for IRFP23N50L. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP23N50L, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN Vishay Intertechnologies IRFP23N50L vs IRFP23N50LPBF
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN International Rectifier IRFP23N50L vs IRFP23N50LPBF
IRFP23N50L Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3 International Rectifier IRFP23N50L vs IRFP23N50L
Part Number Description Manufacturer Compare
IXFV26N50PS Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220SMD, 3 PIN IXYS Corporation IRFP23N50L vs IXFV26N50PS
APT24F50S Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D3PAK-3 Microsemi Corporation IRFP23N50L vs APT24F50S
IXTT26N50P Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IRFP23N50L vs IXTT26N50P
IRFP23N50L Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, PLASTIC PACKAGE-3 International Rectifier IRFP23N50L vs IRFP23N50L
IXFT26N55Q Power Field-Effect Transistor, 26A I(D), 550V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, D3, 3 PIN Littelfuse Inc IRFP23N50L vs IXFT26N55Q
IXFT26N50P Power Field-Effect Transistor, 26A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IRFP23N50L vs IXFT26N50P
IRFBA22N50APBF Power Field-Effect Transistor, 24A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, LEAD FREE, SUPER-220, 3 PIN International Rectifier IRFP23N50L vs IRFBA22N50APBF
APT24F50B Power Field-Effect Transistor, 24A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD Microchip Technology Inc IRFP23N50L vs APT24F50B
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN International Rectifier IRFP23N50L vs IRFP23N50LPBF
IRFP23N50LPBF Power Field-Effect Transistor, 23A I(D), 500V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, TO-247AC, 3 PIN Vishay Intertechnologies IRFP23N50L vs IRFP23N50LPBF

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