Part Details for IRFP250 by International Rectifier
Overview of IRFP250 by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFP250
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 12 |
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RFQ | ||
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Bristol Electronics | 15 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-247AA | 162 |
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$1.9500 / $4.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AA | 9 |
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$2.7940 / $3.8100 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AA | 77 |
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$3.0000 / $4.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AA | 1 |
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$5.0595 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AA | 140 |
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$4.4400 / $7.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AA | 44 |
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$3.0000 / $4.5000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-247AA | 32 |
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$3.0000 / $4.5000 | Buy Now |
Part Details for IRFP250
IRFP250 CAD Models
IRFP250 Part Data Attributes
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IRFP250
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFP250
International Rectifier
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 190 W | |
| Power Dissipation-Max (Abs) | 190 W | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP250
This table gives cross-reference parts and alternative options found for IRFP250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP250N | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | IRFP250 vs IRFP250N |
| IRFP250 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | IRFP250 vs IRFP250 |
| IRFP250PBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3 | Vishay Siliconix | IRFP250 vs IRFP250PBF |
| IRFP250 | 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | IRFP250 vs IRFP250 |
| MTW32N20E | 32A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | IRFP250 vs MTW32N20E |
| IRFP250NPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFP250 vs IRFP250NPBF |
| IRFP250PBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP250 vs IRFP250PBF |
| IRFP250N | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | International Rectifier | IRFP250 vs IRFP250N |
| IRFP250NPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRFP250 vs IRFP250NPBF |
| BUZ341 | Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, | Siemens | IRFP250 vs BUZ341 |