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Transistors / Power Field-Effect Transistors / IRFP250NPBF
Datasheets
IRFP250NPBF by:

Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRFP250NPBF by Infineon Technologies AG

Results Overview of IRFP250NPBF by Infineon Technologies AG

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IRFP250NPBF Information

IRFP250NPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFP250NPBF

Part # Distributor Description Stock Price Buy
DISTI # 63J6859
Newark N Channel Mosfet, 200V, 30A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:30A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Infineon IRFP250NPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk 4614
  • 1 $1.0900
  • 10 $1.0900
  • 100 $1.0900
  • 800 $1.0000
  • 1,200 $1.0000
  • 2,800 $1.0000
$1.0000 / $1.0900 Buy Now
DISTI # IRFP250NPBF
Avnet Americas Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP250NPBF) RoHS: Compliant Min Qty: 25 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube 293
RFQ
DISTI # 63J6859
Avnet Americas Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 63J6859) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 2041 Partner Stock
  • 1 $3.1400
  • 10 $2.9700
  • 100 $1.7800
  • 800 $1.3800
  • 2,800 $1.3700
$1.3700 / $3.1400 Buy Now
DISTI # 70017035
RS MOSFET, Power, N-Ch, VDSS 200V, RDS(ON) 0.075Ohm, ID 30A, TO-247AC, PD 214W, VGS +/-20V | Infineon IRFP250NPBF RoHS: Not Compliant Min Qty: 25 Package Multiple: 1 Container: Bulk 0
  • 25 $2.4300
  • 125 $2.3100
  • 250 $2.1800
  • 500 $2.0600
$2.0600 / $2.4300 RFQ
Bristol Electronics   21
RFQ
Rochester Electronics IRFP250N - N-Channel Power MOSFET 12V - 300V RoHS: Compliant Status: Active Min Qty: 1 5765
  • 1 $1.4400
  • 25 $1.4100
  • 100 $1.3500
  • 500 $1.3000
  • 1,000 $1.2200
$1.2200 / $1.4400 Buy Now
DISTI # IRFP250NPBF
TME Transistor: N-MOSFET, unipolar, 200V, 30A, 214W, TO247AC Min Qty: 1 193
  • 1 $2.4400
  • 10 $1.5900
  • 25 $1.4000
  • 50 $1.3300
  • 100 $1.2000
  • 250 $1.1400
  • 400 $1.0600
  • 500 $1.0400
$1.0400 / $2.4400 Buy Now
DISTI # C1S327400158600
Chip One Stop Trans MOSFET N-CH Si 200V 30A 3-Pin(3+Tab) TO-247AC Tube RoHS: Compliant Container: Tube 702
  • 1 $1.0000
  • 10 $0.7070
  • 50 $0.6460
  • 100 $0.6450
$0.6450 / $1.0000 Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 13
RFQ
DISTI # SP001554946
EBV Elektronik Trans MOSFET N-CH 200V 30A 3-Pin(3+Tab) TO-247AC (Alt: SP001554946) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 9 Weeks, 0 Days EBV - 52800
Buy Now
LCSC 200V 30A 0.07510V18A 214W 4V 1 N-channel TO-247AC-3 MOSFETs ROHS 18134
  • 1 $0.9089
  • 10 $0.7804
  • 25 $0.5417
  • 100 $0.4667
  • 400 $0.4438
  • 800 $0.4285
$0.4285 / $0.9089 Buy Now
New Advantage Corporation Single N-Channel 200 V 0.075 Ohm 123 nC HEXFET� Power Mosfet - TO-247AC RoHS: Compliant Min Qty: 1 Package Multiple: 400 42400
  • 400 $2.4300
  • 42,400 $2.2500
$2.2500 / $2.4300 Buy Now
Win Source Electronics MOSFET N-CH 200V 30A TO-247AC 30000
  • 65 $0.7772
  • 160 $0.6378
  • 245 $0.6178
  • 335 $0.5979
  • 435 $0.5780
  • 580 $0.5182
$0.5182 / $0.7772 Buy Now

Part Details for IRFP250NPBF

IRFP250NPBF CAD Models

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IRFP250NPBF Part Data Attributes

Parametric Data
IRFP250NPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFP250NPBF Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas) 315 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 214 W
Pulsed Drain Current-Max (IDM) 120 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

IRFP250NPBF Related Parts

IRFP250NPBF Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IRFP250NPBF is typically defined by the manufacturer as the region where the device can operate safely without damage. This information is usually provided in the datasheet or in a separate application note. For the IRFP250NPBF, the SOA is typically limited by the maximum drain-source voltage, drain current, and power dissipation.

  • To ensure proper thermal management of the IRFP250NPBF, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring good contact between the device and the heat sink. Additionally, the PCB design should allow for good airflow and heat dissipation.

  • The recommended gate drive voltage for the IRFP250NPBF is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can help to reduce switching losses and improve the device's overall performance.

  • To protect the IRFP250NPBF from electrostatic discharge (ESD), it is essential to handle the device with care and follow proper ESD precautions. This includes using ESD-safe materials, grounding oneself before handling the device, and using ESD protection devices such as TVS diodes or ESD suppressors.

  • The maximum allowed drain-source voltage (Vds) for the IRFP250NPBF is 200V, as specified in the datasheet. Exceeding this voltage can damage the device.

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