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Part Details for IRFP250PBF by Vishay Siliconix
Overview of IRFP250PBF by Vishay Siliconix
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFP250PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFP250PBF-ND
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DigiKey | MOSFET N-CH 200V 30A TO247-3 Min Qty: 1 Lead time: 20 Weeks Container: Tube |
942 In Stock |
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$1.7737 / $3.8000 | Buy Now |
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DISTI #
70459464
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RS | MOSFET N-CH 200V 30A TO-247AC | Siliconix / Vishay IRFP250PBF RoHS: Not Compliant Min Qty: 500 Package Multiple: 1 Container: Bulk | 0 |
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$3.9400 / $4.6300 | RFQ |
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New Advantage Corporation | Single N-Channel 200 V 0.085 Ohms Flange Mount Power Mosfet - TO-247AC RoHS: Compliant Min Qty: 1 Package Multiple: 25 | 2350 |
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$2.0400 / $2.1900 | Buy Now |
Part Details for IRFP250PBF
IRFP250PBF CAD Models
IRFP250PBF Part Data Attributes
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IRFP250PBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFP250PBF
Vishay Siliconix
Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TO-247 | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 410 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 120 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP250PBF
This table gives cross-reference parts and alternative options found for IRFP250PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP250PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP250N | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | IRFP250PBF vs IRFP250N |
| IRFP250 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Vishay Siliconix | IRFP250PBF vs IRFP250 |
| IRFP250 | 33A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 | Rochester Electronics LLC | IRFP250PBF vs IRFP250 |
| MTW32N20E | 32A, 200V, 0.085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | IRFP250PBF vs MTW32N20E |
| IRFP250NPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFP250PBF vs IRFP250NPBF |
| IRFP250PBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP250PBF vs IRFP250PBF |
| IRFP250N | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3 PIN | International Rectifier | IRFP250PBF vs IRFP250N |
| IRFP250NPBF | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRFP250PBF vs IRFP250NPBF |
| BUZ341 | Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, | Siemens | IRFP250PBF vs BUZ341 |
| IRFP250 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | IRFP250PBF vs IRFP250 |