Datasheets
IRFP254PBF by:

Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3

Part Details for IRFP254PBF by Vishay Siliconix

Results Overview of IRFP254PBF by Vishay Siliconix

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IRFP254PBF Information

IRFP254PBF by Vishay Siliconix is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRFP254PBF

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IRFP254PBF Part Data Attributes

IRFP254PBF Vishay Siliconix
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IRFP254PBF Vishay Siliconix Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, ROHS COMPLIANT PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TO-247
Package Description ROHS COMPLIANT PACKAGE-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 410 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 23 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 92 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFP254PBF

This table gives cross-reference parts and alternative options found for IRFP254PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP254PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IRFP254 Intersil Corporation Check for Price 23A, 250V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 IRFP254PBF vs IRFP254
Part Number Manufacturer Composite Price Description Compare
IRFP254PBF International Rectifier Check for Price Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 IRFP254PBF vs IRFP254PBF
IRFP254 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 25A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRFP254PBF vs IRFP254
IRFP254PBF Vishay Intertechnologies $2.1815 Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 IRFP254PBF vs IRFP254PBF
IRFP254 Vishay Intertechnologies Check for Price Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFP254PBF vs IRFP254
IRFP254 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IRFP254PBF vs IRFP254
IRFP254 International Rectifier Check for Price Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC IRFP254PBF vs IRFP254

IRFP254PBF Related Parts

IRFP254PBF Frequently Asked Questions (FAQ)

  • The maximum SOA for the IRFP254PBF is typically defined by the manufacturer as the maximum voltage and current ratings, which are 55V and 23A respectively. However, it's essential to consider the thermal and electrical stress on the device to ensure reliable operation.

  • To ensure proper thermal management, it's crucial to provide a heat sink with a thermal resistance of less than 1°C/W, and to ensure good thermal contact between the device and the heat sink. Additionally, consider the maximum junction temperature (Tj) rating of 175°C and the thermal impedance of the device.

  • The recommended gate drive voltage for the IRFP254PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V. A higher gate drive voltage can reduce the on-state resistance (Rds(on)) and improve switching performance.

  • To protect the IRFP254PBF from ESD, handle the device by the body or use an anti-static wrist strap, and store the device in an anti-static bag or container. Ensure that the device is properly grounded during handling and assembly.

  • The maximum allowed dv/dt for the IRFP254PBF is 10V/ns, which is the maximum rate of change of voltage that the device can withstand without experiencing excessive voltage overshoot or oscillation.

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