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Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
64AH3708
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Newark | Mosfet, N-Ch, 209A, 75V, To-247Ac-3, Transistor Polarity:N Channel, Continuous Drain Current Id:209A, Drain Source Voltage Vds:75V, On Resistance Rds(On):0.0036Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFP2907PBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 998 |
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$3.2100 / $5.1400 | Buy Now |
DISTI #
IRFP2907PBF
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Avnet Americas | Trans MOSFET N-CH 75V 209A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP2907PBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Tube | 9165 |
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$2.0625 | Buy Now |
DISTI #
70017037
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RS | MOSFET, Power, N-Ch, VDSS 75V, RDS(ON) 4.5 Milliohms, ID 209A, TO-247AC, PD 470W,-55C | Infineon IRFP2907PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 0 |
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$4.3200 / $5.0800 | RFQ |
DISTI #
IRFP2907PBF
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TME | Transistor: N-MOSFET, unipolar, 75V, 209A, 330W, TO247AC Min Qty: 1 | 0 |
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$2.2500 / $4.5300 | RFQ |
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CoreStaff Co Ltd | RoHS(Ship within 1day) - D/C 2023 Date Code: 2023 | 394 |
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$2.7900 / $3.8100 | Buy Now |
DISTI #
SP001571058
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EBV Elektronik | Trans MOSFET N-CH 75V 209A 3-Pin(3+Tab) TO-247AC (Alt: SP001571058) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 9 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | MOSFET N-CH 75V 209A TO247AC | 39713 |
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$1.8154 / $2.7232 | Buy Now |
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IRFP2907PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFP2907PBF
Infineon Technologies AG
Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE, PLASTIC PACKAGE-3
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 1970 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 75 V | |
Drain Current-Max (ID) | 90 A | |
Drain-source On Resistance-Max | 0.0045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247AC | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 840 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |