Datasheets
IRFP460PBF by:

Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,

Part Details for IRFP460PBF by Infineon Technologies AG

Overview of IRFP460PBF by Infineon Technologies AG

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFP460PBF

Part # Distributor Description Stock Price Buy
Ameya Holding Limited   6500
RFQ

Part Details for IRFP460PBF

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IRFP460PBF Part Data Attributes

IRFP460PBF Infineon Technologies AG
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IRFP460PBF Infineon Technologies AG Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC,
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 960 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.27 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 350 pF
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 280 W
Pulsed Drain Current-Max (IDM) 80 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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