Datasheets
IRFP4668PBF by:

Power Field-Effect Transistor, 130A I(D), 200V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3

Part Details for IRFP4668PBF by Infineon Technologies AG

Overview of IRFP4668PBF by Infineon Technologies AG

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Price & Stock for IRFP4668PBF

Part # Distributor Description Stock Price Buy
DISTI # 19P2518
Newark N Channel Mosfet, 200V, 130A, To-247Ac, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:130A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:30V, Gate Source Threshold Voltage Max:5V, Msl:- Rohs Compliant: Yes |Infineon IRFP4668PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 12287
  • 1 $8.5700
  • 10 $7.7100
  • 25 $6.8400
  • 50 $6.4800
  • 100 $6.1300
  • 250 $5.7600
  • 800 $5.4000
$5.4000 / $8.5700 Buy Now
DISTI # 19P2518
Avnet Americas Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC - Bulk (Alt: 19P2518) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Bulk 3152 Partner Stock
  • 1 $9.1000
  • 10 $7.8000
  • 25 $7.0700
  • 50 $6.7900
  • 100 $6.5000
$6.5000 / $9.1000 Buy Now
DISTI # IRFP4668PBF
Avnet Americas Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC - Rail/Tube (Alt: IRFP4668PBF) RoHS: Compliant Min Qty: 400 Package Multiple: 25 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 400 $3.8809
  • 450 $3.7668
  • 850 $3.6526
  • 2,000 $3.5385
  • 4,000 $3.4244
  • 20,000 $3.3102
  • 40,000 $3.1961
$3.1961 / $3.8809 Buy Now
DISTI # 70017926
RS MOSFET, N Ch., 200V, 130A, 9.7 MOHM, 161 NC QG, TO-247AC, Pb-Free | Infineon IRFP4668PBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk 0
  • 1 $8.0000
  • 5 $7.6000
  • 10 $7.2000
  • 20 $6.8000
$6.8000 / $8.0000 RFQ
DISTI # IRFP4668PBF
TME Transistor: N-MOSFET, unipolar, 200V, 130A, 520W, TO247AC Min Qty: 1 4
  • 1 $7.7100
  • 10 $6.7400
  • 25 $6.2200
  • 100 $5.4400
  • 250 $4.9600
  • 400 $4.7400
  • 1,000 $4.3200
  • 1,200 $4.2500
$4.2500 / $7.7100 Buy Now
Ameya Holding Limited Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET® Power Mosfet - TO-247AC 2981
RFQ
DISTI # SMC-IRFP4668PBF
Sensible Micro Corporation AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days 399
RFQ
DISTI # C1S327400142937
Chip1Stop MOSFET RoHS: Compliant Container: Tube 2315
  • 1 $6.8400
  • 10 $6.1700
  • 50 $5.5200
  • 100 $4.7100
  • 200 $4.4700
  • 400 $4.2000
  • 800 $3.9500
  • 1,600 $3.8600
$3.8600 / $6.8400 Buy Now
CHIPMALL.COM LIMITED MOSFET N-CH 200V 130A TO247AC 5702
  • 1 $2.8863
  • 10 $2.5456
  • 100 $1.8122
  • 500 $1.7173
  • 1,000 $1.6743
$1.6743 / $2.8863 Buy Now
CoreStaff Co Ltd RoHS(Ship within 1day) - D/C 2024 Date Code: 2024 400
  • 1 $10.2080
  • 5 $5.6700
  • 10 $5.1020
  • 30 $4.7240
  • 50 $4.6480
  • 60 $4.6300
$4.6300 / $10.2080 Buy Now
DISTI # SP001572854
EBV Elektronik Trans MOSFET N-CH 200V 130A 3-Pin(3+Tab) TO-247AC (Alt: SP001572854) RoHS: Compliant Min Qty: 400 Package Multiple: 400 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
LCSC 200V 130A 9.7m10V81A 520W 5V250uA 1PCSNChannel TO-247AC MOSFETs ROHS 5702
  • 1 $3.0066
  • 10 $2.6517
  • 30 $2.1007
  • 100 $1.8877
  • 500 $1.7889
  • 1,000 $1.7441
$1.7441 / $3.0066 Buy Now
New Advantage Corporation Single N-Channel 200 V 9.7 mOhm 161 nC HEXFET� Power Mosfet - TO-247AC RoHS: Compliant Min Qty: 1 Package Multiple: 25 1525
  • 50 $4.4100
  • 1,525 $4.1200
$4.1200 / $4.4100 Buy Now
Win Source Electronics MOSFET N-CH 200V 130A TO-247AC 22100
  • 20 $2.6170
  • 47 $2.1480
  • 73 $2.0810
  • 100 $2.0130
  • 129 $1.9460
  • 172 $1.7450
$1.7450 / $2.6170 Buy Now

Part Details for IRFP4668PBF

IRFP4668PBF CAD Models

IRFP4668PBF Part Data Attributes

IRFP4668PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFP4668PBF Infineon Technologies AG Power Field-Effect Transistor, 130A I(D), 200V, 0.0097ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 16 Weeks, 3 Days
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 760 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 130 A
Drain-source On Resistance-Max 0.0097 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 520 W
Pulsed Drain Current-Max (IDM) 520 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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