Datasheets
IRFR010TRLPBF by:

TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, FET General Purpose Power

Part Details for IRFR010TRLPBF by Vishay Siliconix

Overview of IRFR010TRLPBF by Vishay Siliconix

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Price & Stock for IRFR010TRLPBF

Part # Distributor Description Stock Price Buy
DISTI # IRFR010TRLPBF-ND
DigiKey MOSFET N-CH 50V 8.2A DPAK Min Qty: 3000 Lead time: 14 Weeks Container: Tape & Reel (TR) Temporarily Out of Stock
  • 3,000 $0.5832
  • 6,000 $0.5554
  • 9,000 $0.5298
$0.5298 / $0.5832 Buy Now

Part Details for IRFR010TRLPBF

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IRFR010TRLPBF Part Data Attributes:

IRFR010TRLPBF Vishay Siliconix
Buy Now Datasheet
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IRFR010TRLPBF Vishay Siliconix TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, FET General Purpose Power
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 8.2 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 29 pF
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 53 ns
Turn-on Time-Max (ton) 67 ns

Alternate Parts for IRFR010TRLPBF

This table gives cross-reference parts and alternative options found for IRFR010TRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR010TRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR010 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR010TRLPBF vs IRFR010
IRFR010PBF Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 Vishay Intertechnologies IRFR010TRLPBF vs IRFR010PBF
IRFR010PBF TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR010TRLPBF vs IRFR010PBF
IRFR010-T1 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR010TRLPBF vs IRFR010-T1
Part Number Description Manufacturer Compare
IRFR010PBF Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3/2 Vishay Intertechnologies IRFR010TRLPBF vs IRFR010PBF
IRFR010-T1 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR010TRLPBF vs IRFR010-T1
IRFR010PBF TRANSISTOR 8.2 A, 50 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR010TRLPBF vs IRFR010PBF
IRFR010 Power Field-Effect Transistor, 8.2A I(D), 50V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR010TRLPBF vs IRFR010

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