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Transistors Power Field-Effect Transistors IRFR024

IRFR024
Description: Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Overview of IRFR024 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFR024 by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   2247
RFQ
Bristol Electronics   5
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-252AA 738
  • 1 $1.4000
  • 87 $0.4200
  • 477 $0.3640
$0.3640 / $1.4000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 685
  • 1 $1.0000
  • 14 $0.4500
  • 112 $0.3000
$0.3000 / $1.0000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 92
  • 1 $3.1500
  • 11 $2.3100
  • 33 $2.1000
$2.1000 / $3.1500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 23
  • 1 $1.2000
  • 5 $1.0000
  • 16 $0.7200
$0.7200 / $1.2000 Buy Now
ComSIT USA POWER MOSFET Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Not Compliant Stock EU - 450
Stock US - 0
Stock MX - 0
Stock CN - 0
Stock HK - 0
RFQ
Chip 1 Exchange INSTOCK 453
RFQ

CAD Models for IRFR024 by International Rectifier
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Part Data Attributes for IRFR024 by International Rectifier
Parametric Data

IRFR024
International Rectifier
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
42 W
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
64 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFR024
    International Rectifier
    Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    VS

Alternate Parts for IRFR024

This table gives cross-reference parts and alternative options found for IRFR024. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR024, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024 vs IRFR024PBF
IRFR024 Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR024 vs IRFR024
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024 vs IRFR024TRPBF
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR024 vs IRFR024PBF
IRFR024TRR Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024 vs IRFR024TRR
SIHFR024-GE3 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR024 vs SIHFR024-GE3
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024 vs IRFR024TRPBF
IRFR024TR Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024 vs IRFR024TR
IRFR024TRLPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024 vs IRFR024TRLPBF
IRFR024TRLPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Siliconix IRFR024 vs IRFR024TRLPBF
Part Number Description Manufacturer Compare
SIHFR024-GE3 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR024 vs SIHFR024-GE3
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024 vs IRFR024TRPBF
IRFR024 Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR024 vs IRFR024
IRFR024TRLPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024 vs IRFR024TRLPBF
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024 vs IRFR024PBF
IRFR024TR Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024 vs IRFR024TR
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024 vs IRFR024PBF
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024 vs IRFR024TRPBF
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR024 vs IRFR024PBF
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR024 vs IRFR024TRPBF

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