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Transistors Power Field-Effect Transistors IRFR024TRPBF

Transistors
IRFR024TRPBF
Description: Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3

Overview of IRFR024TRPBF by Vishay Siliconix

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IRFR024TRPBF by Vishay Siliconix

Part # Manufacturer Description Stock Price Buy
DISTI # IRFR024PBFCT-ND
DigiKey MOSFET N-CH 60V 14A DPAK Min Qty: 1 Lead time: 15 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) 1536
In Stock
  • 1 $1.8400
  • 10 $1.1710
  • 100 $0.7873
  • 500 $0.6227
  • 1,000 $0.5696
  • 2,000 $0.5250
  • 4,000 $0.4874
  • 6,000 $0.4682
  • 10,000 $0.4641
$0.4641 / $1.8400 Buy Now

CAD Models for IRFR024TRPBF by Vishay Siliconix
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Part Data Attributes for IRFR024TRPBF by Vishay Siliconix
Parametric Data

IRFR024TRPBF
Vishay Siliconix
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
VISHAY SILICONIX
Part Package Code
TO-252
Package Description
ROHS COMPLIANT, DPAK-3
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Vishay
Avalanche Energy Rating (Eas)
91 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.1 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
40
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR024TRPBF
    Vishay Siliconix
    Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
    VS

Alternate Parts for IRFR024TRPBF

This table gives cross-reference parts and alternative options found for IRFR024TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR024TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024TRPBF vs IRFR024PBF
IRFR024 Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR024TRPBF vs IRFR024
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024TRPBF vs IRFR024TRPBF
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR024TRPBF vs IRFR024PBF
IRFR024TRR Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024TRPBF vs IRFR024TRR
SIHFR024-GE3 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR024TRPBF vs SIHFR024-GE3
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024TRPBF vs IRFR024TRPBF
IRFR024TR Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024TRPBF vs IRFR024TR
IRFR024 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024TRPBF vs IRFR024
IRFR024TRLPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024TRPBF vs IRFR024TRLPBF
Part Number Description Manufacturer Compare
SIHFR024-GE3 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Vishay Intertechnologies IRFR024TRPBF vs SIHFR024-GE3
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024TRPBF vs IRFR024TRPBF
IRFR024 Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR024TRPBF vs IRFR024
IRFR024TRLPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR024TRPBF vs IRFR024TRLPBF
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024TRPBF vs IRFR024PBF
IRFR024TR Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024TRPBF vs IRFR024TR
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024TRPBF vs IRFR024PBF
IRFR024 Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR024TRPBF vs IRFR024
IRFR024TRPBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 Vishay Intertechnologies IRFR024TRPBF vs IRFR024TRPBF
IRFR024PBF Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR024TRPBF vs IRFR024PBF

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