Part Details for IRFR1018EPBF by Infineon Technologies AG
Overview of IRFR1018EPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFR1018EPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFR1018EPBF-ND
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DigiKey | MOSFET N-CH 60V 56A DPAK Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IRFR1018 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Obsolete Min Qty: 1 | 1289 |
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$0.4214 / $0.4958 | Buy Now |
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DISTI #
1602229
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Farnell | MOSFET, N, D-PAK RoHS: Compliant Min Qty: 5 Lead time: 11 Weeks, 1 Days Container: Each | 0 |
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$0.7000 / $1.4577 | Buy Now |
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Win Source Electronics | MOSFET N-CH 60V 79A DPAK | 110040 |
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$0.5660 / $0.8480 | Buy Now |
Part Details for IRFR1018EPBF
IRFR1018EPBF CAD Models
IRFR1018EPBF Part Data Attributes
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IRFR1018EPBF
Infineon Technologies AG
Buy Now
Datasheet
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IRFR1018EPBF
Infineon Technologies AG
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 88 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.0084 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 110 W | |
| Pulsed Drain Current-Max (IDM) | 315 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR1018EPBF
This table gives cross-reference parts and alternative options found for IRFR1018EPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR1018EPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRFR1018ETR | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR1018EPBF vs AUIRFR1018ETR |
| IRFR1018ETRLPBF | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRFR1018EPBF vs IRFR1018ETRLPBF |
| AUIRFR1018ETRR | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR1018EPBF vs AUIRFR1018ETRR |
| IRFR1018ETRPBF | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Infineon Technologies AG | IRFR1018EPBF vs IRFR1018ETRPBF |
| AUIRFR1018ETRL | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR1018EPBF vs AUIRFR1018ETRL |
| IRFR1018ETRRPBF | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR1018EPBF vs IRFR1018ETRRPBF |
| AUIRFR1018E | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR1018EPBF vs AUIRFR1018E |
| IRFR1018ETRLPBF | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR1018EPBF vs IRFR1018ETRLPBF |
| AUIRFR1018ETRL | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR1018EPBF vs AUIRFR1018ETRL |
| IRFR1018ETRPBF | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | International Rectifier | IRFR1018EPBF vs IRFR1018ETRPBF |