Transistors
IRFR110ATM
Description: 4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3

Overview of IRFR110ATM by Rochester Electronics LLC

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Part Data Attributes for IRFR110ATM by Rochester Electronics LLC

IRFR110ATM
Rochester Electronics LLC
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Package Code
TO-252
Package Description
DPAK-3
Pin Count
3
Reach Compliance Code
unknown
Avalanche Energy Rating (Eas)
59 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
4.7 A
Drain-source On Resistance-Max
0.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
19 A
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR110ATM
    Rochester Electronics LLC
    4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
    VS

Alternate Parts for IRFR110ATM

This table gives cross-reference parts and alternative options found for IRFR110ATM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR110ATM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR110ATF 4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC IRFR110ATM vs IRFR110ATF
IRFR110A Power Field-Effect Transistor, 4.7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR110ATM vs IRFR110A
IRFR110ATM Power Field-Effect Transistor, 4.7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR110ATM vs IRFR110ATM
IRFR110ATF Power Field-Effect Transistor, 4.7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR110ATM vs IRFR110ATF
Part Number Description Manufacturer Compare
IRFR110ATF Power Field-Effect Transistor, 4.7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR110ATM vs IRFR110ATF
IRFR110A Power Field-Effect Transistor, 4.7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR110ATM vs IRFR110A
IRFR110ATF 4.7A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC IRFR110ATM vs IRFR110ATF
IRFR110ATM Power Field-Effect Transistor, 4.7A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation IRFR110ATM vs IRFR110ATM

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