Datasheets
IRFR12N25DTRLP by:

Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Part Details for IRFR12N25DTRLP by International Rectifier

Overview of IRFR12N25DTRLP by International Rectifier

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Price & Stock for IRFR12N25DTRLP

Part # Distributor Description Stock Price Buy
Bristol Electronics   2022
RFQ
Quest Components POWER FIELD-EFFECT TRANSISTOR, 14A I(D), 250V, 0.26OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252AA 564
  • 1 $3.6000
  • 105 $2.2200
  • 451 $1.9800
$1.9800 / $3.6000 Buy Now
Chip 1 Exchange INSTOCK 1634
RFQ

Part Details for IRFR12N25DTRLP

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IRFR12N25DTRLP Part Data Attributes

IRFR12N25DTRLP International Rectifier
Buy Now Datasheet
Compare Parts:
IRFR12N25DTRLP International Rectifier Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-252AA
Package Description LEAD FREE, PLASTIC, DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 250 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.26 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR12N25DTRLP

This table gives cross-reference parts and alternative options found for IRFR12N25DTRLP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR12N25DTRLP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR12N25DPBF Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR12N25DTRLP vs IRFR12N25DPBF
IRFR12N25DTRPBF Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 International Rectifier IRFR12N25DTRLP vs IRFR12N25DTRPBF
IRFR12N25DTRR Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR12N25DTRLP vs IRFR12N25DTRR
IRFR12N25DTRL Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR12N25DTRLP vs IRFR12N25DTRL
IRFR12N25DTR Power Field-Effect Transistor, 14A I(D), 250V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 International Rectifier IRFR12N25DTRLP vs IRFR12N25DTR

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