Part Details for IRFR214 by Intersil Corporation
Overview of IRFR214 by Intersil Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Part Details for IRFR214
IRFR214 CAD Models
IRFR214 Part Data Attributes:
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IRFR214
Intersil Corporation
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Datasheet
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IRFR214
Intersil Corporation
2.2A, 250V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERSIL CORP | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 61 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 2 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 25 W | |
| Pulsed Drain Current-Max (IDM) | 8.8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR214
This table gives cross-reference parts and alternative options found for IRFR214. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR214, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| 2SK2250-01S | Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, KPACK-3 | Fuji Electric Co Ltd | IRFR214 vs 2SK2250-01S |
| 5372196 | https://4donline.ihs.com/images/VipMasterIC/IC/VISH/VISH-S-A0013572219/VISH-S-A0013857046-1.pdf | Active | IRFR214 vs 5372196 |
| IRFR214 | Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | IRFR214 vs | |
| 2073 | https://4donline.ihs.com/images/VipMasterIC/IC/VISH/VISHS72524/VISHS72524-1.pdf | IRFR214 vs | |
| International Rectifier | IRFR214TRLPBF | IRFR214 | IRFR214 vs International Rectifier |
| Active | 10923787 | 2372 | IRFR214 vs Active |
| Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | IRFR214PBF | IRFR214 vs Power Field-Effect Transistor, 2.2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | |
| https://4donline.ihs.com/images/VipMasterIC/IC/VISH/VISHS72524/VISHS72524-1.pdf | 7.17 | 10915645 | IRFR214 vs https://4donline.ihs.com/images/VipMasterIC/IC/VISH/VISHS72524/VISHS72524-1.pdf |
| IRFR214 | International Rectifier | IRFR214 vs IRFR214 | |
| 2073 | Transferred | 7.22 | IRFR214 vs 2073 |