IRFR220TR
Description: Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Overview of IRFR220TR by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IRFR220TR by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   1543
RFQ
Bristol Electronics   1381
RFQ
Quest Components 220TR 1711
  • 1 $0.4500
  • 201 $0.2100
  • 953 $0.1875
$0.1875 / $0.4500 Buy Now
Quest Components 220TR 1600
  • 1 $0.7630
  • 132 $0.3815
  • 525 $0.3052
$0.3052 / $0.7630 Buy Now
Quest Components 220TR 1234
  • 1 $0.7500
  • 134 $0.3750
  • 534 $0.3000
$0.3000 / $0.7500 Buy Now

CAD Models for IRFR220TR by International Rectifier
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Part Data Attributes for IRFR220TR by International Rectifier

IRFR220TR
International Rectifier
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
200 V
Drain Current-Max (ID)
4.8 A
Drain-source On Resistance-Max
0.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
42 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFR220TR
    International Rectifier
    Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    VS

Alternate Parts for IRFR220TR

This table gives cross-reference parts and alternative options found for IRFR220TR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR220TR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR220TRR Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR220TR vs IRFR220TRR
IRFR220 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFR220TR vs IRFR220
IRFR220 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR220TR vs IRFR220
IRFR220TRPBF Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR220TR vs IRFR220TRPBF
IRFR220PBF Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR220TR vs IRFR220PBF
Part Number Description Manufacturer Compare
IRFR220-T1 Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR220TR vs IRFR220-T1
IRFR220TRR Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR220TR vs IRFR220TRR
IRFR220PBF Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR220TR vs IRFR220PBF
IRFR220TRLPBF Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, International Rectifier IRFR220TR vs IRFR220TRLPBF
IRFR220 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR220TR vs IRFR220
IRFR220 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFR220TR vs IRFR220

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