Part Details for IRFR220TRPBF by International Rectifier
Overview of IRFR220TRPBF by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFR220TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 7 | 1925 |
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$0.1950 / $0.7500 | Buy Now |
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Quest Components | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 329 |
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$0.2100 / $0.4500 | Buy Now |
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Quest Components | 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 1540 |
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$0.2600 / $1.0000 | Buy Now |
Part Details for IRFR220TRPBF
IRFR220TRPBF CAD Models
IRFR220TRPBF Part Data Attributes
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IRFR220TRPBF
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFR220TRPBF
International Rectifier
Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 4.8 A | |
| Drain-source On Resistance-Max | 0.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 42 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR220TRPBF
This table gives cross-reference parts and alternative options found for IRFR220TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR220TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR220TR | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | International Rectifier | IRFR220TRPBF vs IRFR220TR |
| IRFR220PBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR220TRPBF vs IRFR220PBF |
| IRFR220 | 4.6A, 200V, 0.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | IRFR220TRPBF vs IRFR220 |
| IRFR220 | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR220TRPBF vs IRFR220 |
| IRFR220TRLPBF | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | International Rectifier | IRFR220TRPBF vs IRFR220TRLPBF |