Part Details for IRFR321 by Harris Semiconductor
Overview of IRFR321 by Harris Semiconductor
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR321
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFR321-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 761 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
1802 In Stock |
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$0.3900 | Buy Now |
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Rochester Electronics | 3.1A, 350V, 1.8 OHM, N-Channel POWER MOSFET ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 1802 |
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$0.3384 / $0.3981 | Buy Now |
Part Details for IRFR321
IRFR321 CAD Models
IRFR321 Part Data Attributes
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IRFR321
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
IRFR321
Harris Semiconductor
Power Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
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| Rohs Code | No | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Avalanche Energy Rating (Eas) | 190 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 350 V | |
| Drain Current-Max (ID) | 3.1 A | |
| Drain-source On Resistance-Max | 1.8 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 50 W | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 65 ns | |
| Turn-on Time-Max (ton) | 36 ns |
Alternate Parts for IRFR321
This table gives cross-reference parts and alternative options found for IRFR321. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR321, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR321 | Power Field-Effect Transistor, 3.1A I(D), 350V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR321 vs IRFR321 |