Part Details for IRFR3607TRPBF by Infineon Technologies AG
Overview of IRFR3607TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR3607TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
25R3336
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Newark | N Channel Mosfet, 75V, 56A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:75V, Continuous Drain Current Id:56A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon IRFR3607TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 3712 |
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$0.5870 | Buy Now |
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DISTI #
86AK5314
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Newark | Mosfet, N-Ch, 75V, 56A, To-252 Rohs Compliant: Yes |Infineon IRFR3607TRPBF Min Qty: 2000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7200 / $0.7640 | Buy Now |
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DISTI #
IRFR3607TRPBFCT-ND
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DigiKey | MOSFET N-CH 75V 56A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16863 In Stock |
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$0.6926 / $1.6500 | Buy Now |
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DISTI #
IRFR3607TRPBF
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3607TRPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6464 / $0.7849 | Buy Now |
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DISTI #
IRFR3607TRPBF
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3607TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.6233 / $0.7618 | Buy Now |
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DISTI #
25R3336
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Avnet Americas | Trans MOSFET N-CH 75V 80A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 25R3336) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 0 Days Container: Ammo Pack | 3712 Partner Stock |
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$1.2600 / $1.8500 | Buy Now |
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DISTI #
942-IRFR3607TRPBF
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Mouser Electronics | MOSFET MOSFT 75V 80A 9.0mOhm 56nC Qg RoHS: Compliant | 10613 |
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$0.6780 / $1.6500 | Buy Now |
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DISTI #
70019009
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RS | IRFR3607TRPBF N-channel MOSFET Transistor, 80 A, 75 V, 3+Tab-Pin DPAK | Infineon IRFR3607TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.2900 | RFQ |
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Future Electronics | Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Non Compliant pbFree: No Min Qty: 2000 Package Multiple: 2000 Container: Reel | 62000Reel |
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$0.6650 / $0.6950 | Buy Now |
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Future Electronics | Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3 RoHS: Non Compliant pbFree: No Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.6650 / $0.6950 | Buy Now |
Part Details for IRFR3607TRPBF
IRFR3607TRPBF CAD Models
IRFR3607TRPBF Part Data Attributes
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IRFR3607TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR3607TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 19 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 120 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 75 V | |
| Drain Current-Max (ID) | 56 A | |
| Drain-source On Resistance-Max | 0.009 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 310 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR3607TRPBF
This table gives cross-reference parts and alternative options found for IRFR3607TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3607TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRFR3607TRL | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR3607TRPBF vs AUIRFR3607TRL |
| IRFR3607TRL | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3607TRPBF vs IRFR3607TRL |
| IRFR3607TRLPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3607TRPBF vs IRFR3607TRLPBF |
| IRFR3607TRPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3607TRPBF vs IRFR3607TRPBF |
| IRFR3607TR | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR3607TRPBF vs IRFR3607TR |
| AUIRFR3607 | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR3607TRPBF vs AUIRFR3607 |
| IRFR3607TRRPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3607TRPBF vs IRFR3607TRRPBF |
| IRFR3607TRRPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3607TRPBF vs IRFR3607TRRPBF |
| IRFR3607TRLPBF | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR3607TRPBF vs IRFR3607TRLPBF |
| IRFR3607TRR | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR3607TRPBF vs IRFR3607TRR |