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Part Details for IRFR3710ZTRLPBF by Infineon Technologies AG
Overview of IRFR3710ZTRLPBF by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFR3710ZTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
34AC1749
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Newark | Mosfet, N-Ch, 100V, 42A, 175Deg C, 140W, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:42A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR3710ZTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 8 |
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$0.2390 | Buy Now |
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DISTI #
86AK5316
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Newark | Mosfet, N-Ch, 100V, 42A, To-252Aa Rohs Compliant: Yes |Infineon IRFR3710ZTRLPBF RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$0.7160 | Buy Now |
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DISTI #
34AC1749
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Avnet Americas | Trans MOSFET N-CH 100V 56A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 34AC1749) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 8 Partner Stock |
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$1.5300 / $1.8000 | Buy Now |
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DISTI #
IRFR3710ZTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 56A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3710ZTRLPBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.5307 / $0.5573 | Buy Now |
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Rochester Electronics | IRFR3710 - 12V-300V N-Channel Power MOSFET ' RoHS: Compliant Status: Active Min Qty: 1 | 15000 |
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$0.6316 / $0.7431 | Buy Now |
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Ameya Holding Limited | Single N-Channel 100 V 18 mOhm 100 nC HEXFET® Power Mosfet - TO-252-3 | 3000 |
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RFQ | |
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DISTI #
C1S322000586642
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Chip1Stop | Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Container: Cut Tape | 4860 |
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$0.6780 / $1.4000 | Buy Now |
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DISTI #
SP001567664
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EBV Elektronik | Trans MOSFET N-CH 100V 56A 3-Pin(2+Tab) DPAK T/R (Alt: SP001567664) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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Win Source Electronics | HEXFET® Power MOSFET | MOSFET N-CH 100V 42A DPAK | 250340 |
|
$0.3832 / $0.5748 | Buy Now |
Part Details for IRFR3710ZTRLPBF
IRFR3710ZTRLPBF CAD Models
IRFR3710ZTRLPBF Part Data Attributes
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IRFR3710ZTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR3710ZTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, PLASTIC, DPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 220 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR3710ZTRLPBF
This table gives cross-reference parts and alternative options found for IRFR3710ZTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3710ZTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFR3710ZTRPBF | Infineon Technologies AG | $0.7659 | Power Field-Effect Transistor, 42A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | IRFR3710ZTRLPBF vs IRFR3710ZTRPBF |