Datasheets
IRFR3806TRPBF by:

Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3

Part Details for IRFR3806TRPBF by Infineon Technologies AG

Results Overview of IRFR3806TRPBF by Infineon Technologies AG

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IRFR3806TRPBF Information

IRFR3806TRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IRFR3806TRPBF

Part # Distributor Description Stock Price Buy
DISTI # 13AC9137
Newark Mosfet, N-Ch, 60V, 43A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:43A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.0126Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFR3806TRPBF RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 10233
  • 1 $1.2700
  • 10 $0.9540
  • 25 $0.8680
  • 50 $0.7830
  • 100 $0.6960
  • 250 $0.6520
$0.6520 / $1.2700 Buy Now
DISTI # 86AK5318
Newark Mosfet, N-Ch, 60V, 43A, To-252Aa Rohs Compliant: Yes |Infineon IRFR3806TRPBF RoHS: Compliant Min Qty: 6000 Package Multiple: 1 Date Code: 1 Container: Reel 0
  • 6,000 $0.5210
$0.5210 Buy Now
DISTI # IRFR3806TRPBF
Avnet Americas Trans MOSFET N-CH 60V 43A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR3806TRPBF) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days Container: Reel 2000
  • 2,000 $0.3538
  • 4,000 $0.3509
  • 8,000 $0.3480
  • 12,000 $0.3451
  • 16,000 $0.3421
$0.3421 / $0.3538 Buy Now
DISTI # IRFR3806TRPBF
TME Transistor: N-MOSFET, unipolar, 60V, 43A, 71W, DPAK Min Qty: 1 1805
  • 1 $1.0600
  • 10 $0.7790
  • 50 $0.6790
  • 100 $0.5530
  • 500 $0.4590
  • 1,000 $0.4240
  • 2,000 $0.4020
$0.4020 / $1.0600 Buy Now
Ameya Holding Limited Single N-Channel 60 V 15.8 mOhm 30 nC HEXFET® Power Mosfet - TO-252AA 1687
RFQ
DISTI # C1S327400997841
Chip1Stop Trans MOSFET N-CH 60V 43A 3-Pin(2+Tab) DPAK T/R RoHS: Compliant Container: Cut Tape 16115
  • 5 $0.3530
  • 10 $0.3180
  • 50 $0.3170
  • 200 $0.3160
  • 500 $0.3130
  • 1,000 $0.3120
  • 5,000 $0.3080
  • 12,000 $0.2970
$0.2970 / $0.3530 Buy Now
CHIPMALL.COM LIMITED 60V 43A 15.8m@10V,25A 71W 4V@50uA 1 N-Channel TO-252-2DPAK MOSFETs ROHS 5352
  • 1 $0.5746
  • 10 $0.4823
  • 30 $0.4361
  • 100 $0.3900
  • 500 $0.2903
  • 1,000 $0.2754
$0.2754 / $0.5746 Buy Now
DISTI # SP001564890
EBV Elektronik Trans MOSFET N-CH 60V 43A 3-Pin(2+Tab) DPAK T/R (Alt: SP001564890) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days EBV - 68000
Buy Now
LCSC 60V 43A 15.8m10V25A 71W 4V50uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS 6702
  • 1 $0.5985
  • 10 $0.5024
  • 30 $0.4543
  • 100 $0.4062
  • 500 $0.3024
  • 1,000 $0.2869
$0.2869 / $0.5985 Buy Now
New Advantage Corporation Single N-Channel 60 V 15.8 mOhm 30 nC HEXFET� Power Mosfet - TO-252AA RoHS: Compliant Min Qty: 1 Package Multiple: 2000 54000
  • 2,000 $0.5435
  • 54,000 $0.5030
$0.5030 / $0.5435 Buy Now
Win Source Electronics MOSFET N-CH 60V 43A DPAK 12600
  • 140 $0.3602
  • 300 $0.3370
  • 465 $0.3254
  • 665 $0.3022
  • 865 $0.2905
  • 1,080 $0.2789
$0.2789 / $0.3602 Buy Now

Part Details for IRFR3806TRPBF

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IRFR3806TRPBF Part Data Attributes

IRFR3806TRPBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFR3806TRPBF Infineon Technologies AG Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 8 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 73 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 43 A
Drain-source On Resistance-Max 0.0158 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 71 W
Pulsed Drain Current-Max (IDM) 170 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR3806TRPBF

This table gives cross-reference parts and alternative options found for IRFR3806TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR3806TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
AUIRFR3806TRL Infineon Technologies AG $1.4724 Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 IRFR3806TRPBF vs AUIRFR3806TRL

IRFR3806TRPBF Related Parts

IRFR3806TRPBF Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IRFR3806TRPBF is -55°C to 175°C.

  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using a thermally conductive interface material, and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IRFR3806TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.

  • To protect the IRFR3806TRPBF from ESD, handle the device by the body or use an anti-static wrist strap, and ensure that the workspace and equipment are ESD-safe.

  • The maximum allowable power dissipation for the IRFR3806TRPBF is 150W, but this can be derated based on the operating temperature and other factors.

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