Part Details for IRFR4104TRPBF by Infineon Technologies AG
Overview of IRFR4104TRPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR4104TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
13AC9138
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Newark | Mosfet, N-Ch, 40V, 42A, To-252Aa, Transistor Polarity:N Channel, Continuous Drain Current Id:42A, Drain Source Voltage Vds:40V, On Resistance Rds(On):0.0043Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Rohs Compliant: Yes |Infineon IRFR4104TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 7566 |
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$0.7310 / $1.5300 | Buy Now |
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DISTI #
IRFR4104PBFCT-ND
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DigiKey | MOSFET N-CH 40V 42A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
6623 In Stock |
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$0.6011 / $1.6000 | Buy Now |
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DISTI #
IRFR4104TRPBF
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Avnet Americas | Trans MOSFET N-CH 40V 119A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR4104TRPBF) RoHS: Not Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.5400 / $0.6600 | Buy Now |
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DISTI #
942-IRFR4104TRPBF
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Mouser Electronics | MOSFET MOSFT 40V 119A 5.5mOhm 59nC Qg RoHS: Compliant | 3479 |
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$0.6010 / $1.3500 | Buy Now |
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DISTI #
E02:0323_00175588
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Arrow Electronics | Trans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks Date Code: 2308 | Europe - 2000 |
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$0.4681 / $0.5850 | Buy Now |
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DISTI #
V72:2272_13891648
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Arrow Electronics | Trans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2152 Container: Cut Strips | Americas - 292 |
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$0.5129 / $0.7412 | Buy Now |
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Future Electronics | Single N-Channel 40V 5.5 mOhm 59 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 2000Reel |
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$0.5100 / $0.5500 | Buy Now |
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Future Electronics | Single N-Channel 40V 5.5 mOhm 59 nC HEXFET® Power Mosfet - TO-252AA RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Container: Reel | 0Reel |
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$0.5900 / $0.6200 | Buy Now |
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DISTI #
43709039
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Verical | Trans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 45 Package Multiple: 1 Date Code: 1849 | Americas - 4053 |
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$0.5063 / $0.7075 | Buy Now |
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DISTI #
10931704
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Verical | Trans MOSFET N-CH Si 40V 119A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 | Americas - 2000 |
|
$0.4671 / $0.5837 | Buy Now |
Part Details for IRFR4104TRPBF
IRFR4104TRPBF CAD Models
IRFR4104TRPBF Part Data Attributes
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IRFR4104TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR4104TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | LEAD FREE, PLASTIC, DPAK-3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 145 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.0055 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 140 W | |
| Pulsed Drain Current-Max (IDM) | 480 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR4104TRPBF
This table gives cross-reference parts and alternative options found for IRFR4104TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR4104TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| AUIRFR4104TR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR4104TRPBF vs AUIRFR4104TR |
| IRFR4104PBF | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR4104TRPBF vs IRFR4104PBF |
| AUIRFR4104 | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR4104TRPBF vs AUIRFR4104 |
| IRFR4104TRR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR4104TRPBF vs IRFR4104TRR |
| AUIRFR4104TRR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR4104TRPBF vs AUIRFR4104TRR |
| IRFR4104TR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR4104TRPBF vs IRFR4104TR |
| AUIRFR4104 | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR4104TRPBF vs AUIRFR4104 |
| IRFR4104TRLPBF | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR4104TRPBF vs IRFR4104TRLPBF |
| AUIRFR4104TRL | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR4104TRPBF vs AUIRFR4104TRL |
| IRFR4104 | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR4104TRPBF vs IRFR4104 |