Part Details for IRFR420ATRLPBF by Vishay Siliconix
Overview of IRFR420ATRLPBF by Vishay Siliconix
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR420ATRLPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFR420ATRLPBF-ND
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DigiKey | MOSFET N-CH 500V 3.3A DPAK Min Qty: 3000 Lead time: 20 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$0.6250 / $0.6716 | Buy Now |
Part Details for IRFR420ATRLPBF
IRFR420ATRLPBF CAD Models
IRFR420ATRLPBF Part Data Attributes:
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IRFR420ATRLPBF
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
IRFR420ATRLPBF
Vishay Siliconix
Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | TO-252 | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 140 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 3.3 A | |
Drain-source On Resistance-Max | 3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 10 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR420ATRLPBF
This table gives cross-reference parts and alternative options found for IRFR420ATRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR420ATRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR4209A | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Fairchild Semiconductor Corporation | IRFR420ATRLPBF vs IRFR4209A |
IRFR420A | Power Field-Effect Transistor, 2.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR420ATRLPBF vs IRFR420A |
IRFR420ATRPBF | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 | Vishay Siliconix | IRFR420ATRLPBF vs IRFR420ATRPBF |
IRFR420ATRLPBF | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR420ATRLPBF vs IRFR420ATRLPBF |
SIHFR420A | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Intertechnologies | IRFR420ATRLPBF vs SIHFR420A |
IRFR420APBF | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR420ATRLPBF vs IRFR420APBF |
IRFR420ATRPBF | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, | Vishay Intertechnologies | IRFR420ATRLPBF vs IRFR420ATRPBF |
SIHFR420A-GE3 | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Vishay Intertechnologies | IRFR420ATRLPBF vs SIHFR420A-GE3 |
IRFR420ATR | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR420ATRLPBF vs IRFR420ATR |
SIHFR420A | TRANSISTOR 3.3 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3, FET General Purpose Power | Vishay Siliconix | IRFR420ATRLPBF vs SIHFR420A |