IRFR4615PBF
Description: Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3

Overview of IRFR4615PBF by Infineon Technologies AG

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Price & Stock for IRFR4615PBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IRFR4615PBF-ND
DigiKey MOSFET N-CH 150V 33A DPAK Lead time: 39 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # 70019731
RS IRFR4615PBF N-channel MOSFET Transistor, 33 A, 150 V, 3-Pin DPAK | Infineon IRFR4615PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk 0
  • 5 $1.3800
  • 50 $1.3100
  • 250 $1.2400
  • 500 $1.1700
$1.1700 / $1.3800 RFQ
Win Source Electronics MOSFET N-CH 150V 33A D-PAK 218000
  • 65 $0.7780
  • 160 $0.6380
  • 245 $0.6180
  • 335 $0.5980
  • 435 $0.5780
  • 580 $0.5190
$0.5190 / $0.7780 Buy Now

CAD Models for IRFR4615PBF by Infineon Technologies AG
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Part Data Attributes for IRFR4615PBF by Infineon Technologies AG

IRFR4615PBF
Infineon Technologies AG
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
109 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
Drain Current-Max (ID)
33 A
Drain-source On Resistance-Max
0.042 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
144 W
Pulsed Drain Current-Max (IDM)
140 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN OVER NICKEL
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR4615PBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
    VS

Alternate Parts for IRFR4615PBF

This table gives cross-reference parts and alternative options found for IRFR4615PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR4615PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR4615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier IRFR4615PBF vs IRFR4615TRLPBF
IRFR4615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG IRFR4615PBF vs IRFR4615TRRPBF
IRFR4615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG IRFR4615PBF vs IRFR4615TRLPBF
IRFR4615TRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier IRFR4615PBF vs IRFR4615TRPBF
Part Number Description Manufacturer Compare
RTQ045N03 Power Field-Effect Transistor, 4.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT, 6 PIN ROHM Semiconductor IRFR4615PBF vs RTQ045N03
MGSF3454VT3 Power Field-Effect Transistor, 4.2A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 Motorola Semiconductor Products IRFR4615PBF vs MGSF3454VT3
IRFR4615PBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier IRFR4615PBF vs IRFR4615PBF
IRFR4615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 International Rectifier IRFR4615PBF vs IRFR4615TRLPBF
MGSF3454VT1 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6 Motorola Mobility LLC IRFR4615PBF vs MGSF3454VT1
MGSF3454VT3 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6 Motorola Mobility LLC IRFR4615PBF vs MGSF3454VT3
IRFR4615TRLPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG IRFR4615PBF vs IRFR4615TRLPBF
MGSF3454VT1 4.2A, 30V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TSOP-6 onsemi IRFR4615PBF vs MGSF3454VT1
IRFR4615TRRPBF Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Infineon Technologies AG IRFR4615PBF vs IRFR4615TRRPBF
RTQ045N03TR Power Field-Effect Transistor, 4.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSMT6, 6 PIN ROHM Semiconductor IRFR4615PBF vs RTQ045N03TR

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