There are no models available for this part yet.
Overview of IRFR9120N by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 6 listings )
- Number of FFF Equivalents: ( 6 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 6 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for IRFR9120N by International Rectifier
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Bristol Electronics | 50 |
|
RFQ | ||||
Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 87 |
|
$0.6300 / $1.0500 | Buy Now | ||
Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 40 |
|
$1.9866 / $3.6120 | Buy Now | ||
Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 16 |
|
$7.2902 / $10.9353 | Buy Now | ||
ComSIT USA | Electronic Component RoHS: Not Compliant |
|
|
RFQ | |||
Win Source Electronics | Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.6A) | 195657 |
|
$0.2830 / $0.4240 | Buy Now |
CAD Models for IRFR9120N by International Rectifier
Part Data Attributes for IRFR9120N by International Rectifier
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Transferred
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
|
Part Package Code
|
TO-252AA
|
Package Description
|
PLASTIC, DPAK-3
|
Pin Count
|
3
|
Reach Compliance Code
|
compliant
|
ECCN Code
|
EAR99
|
HTS Code
|
8541.29.00.95
|
Additional Feature
|
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
|
Avalanche Energy Rating (Eas)
|
100 mJ
|
Case Connection
|
DRAIN
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
100 V
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Drain Current-Max (ID)
|
6.6 A
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Drain-source On Resistance-Max
|
0.48 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-252AA
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JESD-30 Code
|
R-PSSO-G2
|
JESD-609 Code
|
e0
|
Moisture Sensitivity Level
|
1
|
Number of Elements
|
1
|
Number of Terminals
|
2
|
Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
|
PLASTIC/EPOXY
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Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
240
|
Polarity/Channel Type
|
P-CHANNEL
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Power Dissipation-Max (Abs)
|
39 W
|
Pulsed Drain Current-Max (IDM)
|
26 A
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Qualification Status
|
Not Qualified
|
Surface Mount
|
YES
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
GULL WING
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Terminal Position
|
SINGLE
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
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Transistor Element Material
|
SILICON
|
Alternate Parts for IRFR9120N
This table gives cross-reference parts and alternative options found for IRFR9120N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9120N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR9120N | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR9120N vs IRFR9120N |
IRFR9120NTRRPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR9120N vs IRFR9120NTRRPBF |
IRFR9120NTRL | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR9120N vs IRFR9120NTRL |
IRFR9120NTRPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR9120N vs IRFR9120NTRPBF |
IRFR9120NTRPBF | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR9120N vs IRFR9120NTRPBF |
IRFR9120NTR | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR9120N vs IRFR9120NTR |