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Transistors Power Field-Effect Transistors IRFRC20

IRFRC20
Description: Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Overview of IRFRC20 by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Price & Stock for IRFRC20 by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   19
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-252AA 660
  • 1 $2.2400
  • 269 $1.0360
  • 580 $0.9240
$0.9240 / $2.2400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 190
  • 1 $1.4000
  • 68 $0.8400
  • 180 $0.7560
$0.7560 / $1.4000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 162
  • 1 $2.2400
  • 55 $1.2320
  • 123 $1.1200
$1.1200 / $2.2400 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 51
  • 1 $1.0500
  • 6 $0.8400
  • 25 $0.5250
$0.5250 / $1.0500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TO-252AA 32
  • 1 $2.2400
  • 3 $1.6800
  • 16 $1.4000
$1.4000 / $2.2400 Buy Now

CAD Models for IRFRC20 by International Rectifier
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Part Data Attributes for IRFRC20 by International Rectifier
Parametric Data

IRFRC20
International Rectifier
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
2 A
Drain-source On Resistance-Max
4.4 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
240
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
42 W
Power Dissipation-Max (Abs)
42 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Tin/Lead (Sn/Pb)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFRC20
    International Rectifier
    Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    VS

Alternate Parts for IRFRC20

This table gives cross-reference parts and alternative options found for IRFRC20. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFRC20, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFRC20TRLPBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFRC20 vs IRFRC20TRLPBF
IRFRC20PBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFRC20 vs IRFRC20PBF
IRFRC20TRR Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Vishay Intertechnologies IRFRC20 vs IRFRC20TRR
IRFRC20TR Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFRC20 vs IRFRC20TR
IRFRC20PBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFRC20 vs IRFRC20PBF
IRFRC20TRRPBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFRC20 vs IRFRC20TRRPBF
IRFRC20 Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFRC20 vs IRFRC20
IRFRC20TRL Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFRC20 vs IRFRC20TRL
SIHFRC20TR-GE3 TRANSISTOR 2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFRC20 vs SIHFRC20TR-GE3
IRFRC20TRRPBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFRC20 vs IRFRC20TRRPBF
Part Number Description Manufacturer Compare
SIHFRC20TR-GE3 TRANSISTOR 2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFRC20 vs SIHFRC20TR-GE3
IRFRC20PBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFRC20 vs IRFRC20PBF
IRFRC20TRPBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFRC20 vs IRFRC20TRPBF
IRFRC20PBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFRC20 vs IRFRC20PBF
SIHFRC20TR-GE3 Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFRC20 vs SIHFRC20TR-GE3
IRFRC20TRR Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFRC20 vs IRFRC20TRR
IRFRC20TR Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFRC20 vs IRFRC20TR
IRFRC20TRL Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFRC20 vs IRFRC20TRL
IRFRC20TRLPBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFRC20 vs IRFRC20TRLPBF
IRFRC20TRLPBF Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFRC20 vs IRFRC20TRLPBF

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