Part Details for IRFS31N20DTRRP by Infineon Technologies AG
Overview of IRFS31N20DTRRP by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (4 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRFS31N20DTRRP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFS31N20DTRRP-ND
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DigiKey | MOSFET N-CH 200V 31A D2PAK Lead time: 39 Weeks Container: Tape & Reel (TR) | Limited Supply - Call |
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Buy Now | |
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Chip1Cloud | MOSFET N-CH 200V 31A D2PAK | 6090 |
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RFQ |
Part Details for IRFS31N20DTRRP
IRFS31N20DTRRP CAD Models
IRFS31N20DTRRP Part Data Attributes:
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IRFS31N20DTRRP
Infineon Technologies AG
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Datasheet
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Compare Parts:
IRFS31N20DTRRP
Infineon Technologies AG
Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, D2PAK-3/2
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 31 A | |
| Drain-source On Resistance-Max | 0.082 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G2 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 124 A | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN OVER NICKEL | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS31N20DTRRP
This table gives cross-reference parts and alternative options found for IRFS31N20DTRRP. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS31N20DTRRP, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFS31N20DPBF | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRFS31N20DTRRP vs IRFS31N20DPBF |
| IRFS31N20DTRLP | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 | Infineon Technologies AG | IRFS31N20DTRRP vs IRFS31N20DTRLP |
| IRFS31N20DTRLP | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRFS31N20DTRRP vs IRFS31N20DTRLP |
| IRFS31N20D | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2 | Infineon Technologies AG | IRFS31N20DTRRP vs IRFS31N20D |