Part Details for IRFS3206TRRPBF by Infineon Technologies AG
Results Overview of IRFS3206TRRPBF by Infineon Technologies AG
- Distributor Offerings: (14 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
IRFS3206TRRPBF Information
IRFS3206TRRPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS3206TRRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9152
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Newark | Mosfet, N-Ch, 60V, 120A, 175Deg C, 300W, Channel Type:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFS3206TRRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 160 |
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$3.4000 | Buy Now |
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DISTI #
86AK5326
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Newark | Mosfet, N-Ch, 60V, 120A, To-263Ab Rohs Compliant: Yes |Infineon IRFS3206TRRPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.6100 | Buy Now |
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DISTI #
13AC9152
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Avnet Americas | Trans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 13AC9152) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 156 Partner Stock |
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$2.4100 / $3.1000 | Buy Now |
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DISTI #
IRFS3206TRRPBF
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Avnet Americas | Trans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3206TRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Container: Reel | 0 |
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$1.0722 / $1.1087 | Buy Now |
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DISTI #
IRFS3206TRRPBF
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Avnet Americas | Trans MOSFET N-CH 60V 210A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRFS3206TRRPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$1.0724 / $1.1087 | Buy Now |
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DISTI #
70019022
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RS | IRFS3206TRRPBF N-channel MOSFET Transistor, 210 A, 60 V, 3-Pin D2PAK | Infineon IRFS3206TRRPBF RoHS: Not Compliant Min Qty: 800 Package Multiple: 1 Container: Bulk | 0 |
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$2.4600 / $3.0800 | RFQ |
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Rochester Electronics | IRFS3206TRRPBF - TRENCH 40<-<100V RoHS: Compliant Status: Active Min Qty: 1 | Call for Availability |
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$1.2800 / $1.5100 | Buy Now |
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Ameya Holding Limited | Single N-Channel 60V 3 mOhm 120 nC HEXFET® Power Mosfet - D2PAK | 32 |
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RFQ | |
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DISTI #
SMC-IRFS3206TRRPBF
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Sensible Micro Corporation | AS6081 Certified Vendor, 1 Yr Warranty RoHS: Not Compliant Min Qty: 25 Lead time: 2 Weeks, 0 Days | 1701 |
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RFQ | |
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DISTI #
C1S322000494819
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Chip1Stop | Trans MOSFET N-CH Si 60V 210A 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant Container: Cut Tape | 831 |
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$0.9480 / $2.1400 | Buy Now |
Part Details for IRFS3206TRRPBF
IRFS3206TRRPBF CAD Models
IRFS3206TRRPBF Part Data Attributes
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IRFS3206TRRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS3206TRRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 4 Days | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 170 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.003 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Pulsed Drain Current-Max (IDM) | 840 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |