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Transistors Power Field-Effect Transistors IRFS3306PBF

IRFS3306PBF
Description: Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3

Overview of IRFS3306PBF by Infineon Technologies AG

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IRFS3306PBF by Infineon Technologies AG

Part # Manufacturer Description Stock Price Buy
DISTI # IRFS3306PBF-ND
DigiKey MOSFET N-CH 60V 120A D2PAK Lead time: 98 Weeks Container: Tube Limited Supply - Call
Buy Now
DISTI # 70017954
RS MOSFET, N Ch., 60V, 160A, 4.2 MOHM, 85 NC QG, D2-PAK, Pb-Free | Infineon IRFS3306PBF RoHS: Not Compliant Min Qty: 2 Package Multiple: 1 Container: Bulk 0
  • 2 $2.7100
$2.7100 RFQ
Win Source Electronics MOSFET N-CH 60V 120A D2PAK 30410
  • 35 $1.6250
  • 75 $1.3340
  • 120 $1.2920
  • 160 $1.2500
  • 210 $1.2090
  • 280 $1.0840
$1.0840 / $1.6250 Buy Now

CAD Models for IRFS3306PBF by Infineon Technologies AG
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Part Data Attributes for IRFS3306PBF by Infineon Technologies AG
Parametric Data

IRFS3306PBF
Infineon Technologies AG
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Obsolete
Ihs Manufacturer
INFINEON TECHNOLOGIES AG
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Samacsys Manufacturer
Infineon
Avalanche Energy Rating (Eas)
184 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
60 V
Drain Current-Max (ID)
120 A
Drain-source On Resistance-Max
0.0042 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-263AB
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
230 W
Pulsed Drain Current-Max (IDM)
620 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IRFS3306PBF
    Infineon Technologies AG
    Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
    VS

Alternate Parts for IRFS3306PBF

This table gives cross-reference parts and alternative options found for IRFS3306PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS3306PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFS3306TRRPBF Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFS3306PBF vs IRFS3306TRRPBF
AUIRFS3306TRL Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG IRFS3306PBF vs AUIRFS3306TRL
IRFS3306TRLPBF Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFS3306PBF vs IRFS3306TRLPBF
AUIRFS3306TRR Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRFS3306PBF vs AUIRFS3306TRR
Part Number Description Manufacturer Compare
IRFS7537PBF Power Field-Effect Transistor, 173A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3/2 Infineon Technologies AG IRFS3306PBF vs IRFS7537PBF
AUIRFS3306TRR Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 International Rectifier IRFS3306PBF vs AUIRFS3306TRR
IRFS3306TRRPBF Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFS3306PBF vs IRFS3306TRRPBF
PSMN4R6-60BS Power Field-Effect Transistor Nexperia IRFS3306PBF vs PSMN4R6-60BS
IRFS3306TRLPBF Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 Infineon Technologies AG IRFS3306PBF vs IRFS3306TRLPBF
AUIRFS3306TRL Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Infineon Technologies AG IRFS3306PBF vs AUIRFS3306TRL

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