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Part Details for IRFS4310ZTRLPBF by Infineon Technologies AG
Results Overview of IRFS4310ZTRLPBF by Infineon Technologies AG
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFS4310ZTRLPBF Information
IRFS4310ZTRLPBF by Infineon Technologies AG is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFS4310ZTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9159
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Newark | Mosfet, N-Ch, 100V, 120A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFS4310ZTRLPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 293 |
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$1.3700 | Buy Now |
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DISTI #
86AK5335
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Newark | Mosfet, N-Ch, 100V, 120A, To-263 Rohs Compliant: Yes |Infineon IRFS4310ZTRLPBF RoHS: Compliant Min Qty: 800 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
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$1.3600 / $1.4200 | Buy Now |
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DISTI #
IRFS4310ZTRLPBF
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Avnet Americas | Power MOSFET, N Channel, 100 V, 120 A, 0.0048 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: IRFS4310ZTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks, 0 Days Container: Reel | 11200 |
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$0.7104 / $0.7559 | Buy Now |
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DISTI #
13AC9159
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Avnet Americas | Power MOSFET, N Channel, 100 V, 120 A, 0.0048 ohm, TO-263 (D2PAK), Surface Mount - Tape and Reel (Alt: 13AC9159) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 111 Weeks, 0 Days Container: Reel | 293 Partner Stock |
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$2.3400 / $4.4500 | Buy Now |
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Rochester Electronics | IRFS4310ZTRLPBF - TRENCH >=100V RoHS: Compliant Status: Active Min Qty: 1 | 727 |
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$0.7319 / $1.1800 | Buy Now |
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Future Electronics | Single N-Channel 100V 6 mOhm 120 nC HEXFET� Power Mosfet - D2PAK Min Qty: 800 Package Multiple: 800 |
5600 null |
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$0.7300 / $0.7650 | Buy Now |
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DISTI #
IRFS4310ZTRLPBF
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IBS Electronics | SINGLE N-CHANNEL 100V 6 MOHM 120 NC HEXFET®, POWER MOSFET - D2PAK Min Qty: 800 Package Multiple: 1 | 5600 |
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$0.9490 / $0.9945 | Buy Now |
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DISTI #
IRFS4310ZTRLPBF
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Chip One Stop | Semiconductors RoHS: Compliant Min Qty: 1 Lead time: 0 Weeks, 1 Days Container: Cut Tape | 14764 |
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$1.1000 / $2.8000 | Buy Now |
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DISTI #
SP001557376
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EBV Elektronik | Power MOSFET N Channel 100 V 120 A 00048 ohm TO263 D2PAK Surface Mount (Alt: SP001557376) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days | EBV - 16000 |
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Buy Now | |
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LCSC | 100V 127A 4.8m10V75A 250W 2V 1 N-channel TO-263-2 MOSFETs ROHS | 904 |
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$0.7633 / $1.6166 | Buy Now |
Part Details for IRFS4310ZTRLPBF
IRFS4310ZTRLPBF CAD Models
IRFS4310ZTRLPBF Part Data Attributes
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IRFS4310ZTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS4310ZTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 130 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 120 A | |
| Drain-source On Resistance-Max | 0.006 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 250 W | |
| Pulsed Drain Current-Max (IDM) | 560 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFS4310ZTRLPBF
This table gives cross-reference parts and alternative options found for IRFS4310ZTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFS4310ZTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFS4310ZPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS4310ZTRLPBF vs IRFS4310ZPBF |
| IRFS4310ZPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS4310ZTRLPBF vs IRFS4310ZPBF |
| IRFS4310ZTRLPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS4310ZTRLPBF vs IRFS4310ZTRLPBF |
| IRFS4310ZTRRPBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS4310ZTRLPBF vs IRFS4310ZTRRPBF |
| AUIRFS4310ZTRR | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRFS4310ZTRLPBF vs AUIRFS4310ZTRR |
| AUIRFS4310ZTRL | International Rectifier | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRFS4310ZTRLPBF vs AUIRFS4310ZTRL |
| AUIRFS4310ZTRR | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 | IRFS4310ZTRLPBF vs AUIRFS4310ZTRR |
| IRFS4310ZTRRPBF | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 | IRFS4310ZTRLPBF vs IRFS4310ZTRRPBF |
IRFS4310ZTRLPBF Frequently Asked Questions (FAQ)
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The maximum operating temperature range for the IRFS4310ZTRLPBF is -55°C to 175°C.
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To ensure reliability, follow the recommended assembly and soldering guidelines, and ensure proper thermal management. Additionally, consider using a thermal interface material to improve heat dissipation.
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To minimize EMI, use a multi-layer PCB with a solid ground plane, and keep the power and signal traces as short as possible. Also, use a shielded cable or a ferrite bead to filter out high-frequency noise.
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Yes, the IRFS4310ZTRLPBF is rated for high-voltage applications up to 500V. However, ensure that the device is properly derated for the specific application, and follow the recommended design guidelines for high-voltage circuits.
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To troubleshoot issues, check the device's thermal performance, ensure proper PCB layout and assembly, and verify the input and output voltage levels. Also, use a thermal camera or an oscilloscope to monitor the device's temperature and voltage waveforms.