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Power Field-Effect Transistor, 86A I(D), 150V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7/6
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
51AH7950
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Newark | Mosfet, N-Ch, 150V, 86A, 175Deg C, 350W Rohs Compliant: Yes |Infineon IRFS4321TRL7PP Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 0 |
|
$1.9100 / $3.3500 | Buy Now |
DISTI #
E02:0323_07327379
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Arrow Electronics | Trans MOSFET N-CH 150V 86A 7-Pin(6+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Lead time: 12 Weeks Date Code: 2243 | Europe - 800 |
|
$1.7207 / $1.9010 | Buy Now |
DISTI #
V72:2272_13891341
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Arrow Electronics | Trans MOSFET N-CH 150V 86A 7-Pin(6+Tab) D2PAK T/R Min Qty: 1 Package Multiple: 1 Lead time: 98 Weeks Date Code: 2242 Container: Cut Strips | Americas - 150 |
|
$1.5200 / $2.0970 | Buy Now |
DISTI #
73474554
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Verical | Trans MOSFET N-CH 150V 86A 7-Pin(6+Tab) D2PAK T/R Min Qty: 800 Package Multiple: 800 Date Code: 2243 | Americas - 800 |
|
$1.7121 / $1.8925 | Buy Now |
DISTI #
64551990
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Verical | Trans MOSFET N-CH 150V 86A 7-Pin(6+Tab) D2PAK T/R Min Qty: 5 Package Multiple: 1 Date Code: 2242 | Americas - 150 |
|
$1.5200 / $2.0970 | Buy Now |
|
Rochester Electronics | IRFS4321 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 600 |
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$1.6800 / $1.9800 | Buy Now |
|
LCSC | 150V 86A 350W 14.7m10V34A 5V250uA 1PCSNChannel D2PAK-7 MOSFETs ROHS | 4 |
|
$2.6884 / $2.8530 | Buy Now |
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IRFS4321TRL7PP
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFS4321TRL7PP
Infineon Technologies AG
Power Field-Effect Transistor, 86A I(D), 150V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7/6
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G6 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 52 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 150 V | |
Drain Current-Max (ID) | 86 A | |
Drain-source On Resistance-Max | 0.0147 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 350 W | |
Pulsed Drain Current-Max (IDM) | 343 A | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |