Part Details for IRFSL3306PBF by Infineon Technologies AG
Overview of IRFSL3306PBF by Infineon Technologies AG
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IRFSL3306PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRFSL3306PBF
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Avnet Americas | Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-262 - Rail/Tube (Alt: IRFSL3306PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 12 Weeks, 0 Days Container: Tube | 0 |
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$0.8471 / $0.8895 | Buy Now |
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DISTI #
70018345
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RS | IRFSL3306PBF N-channel MOSFET Module, 160 A, 60 V, 3-Pin TO-262 | Infineon IRFSL3306PBF RoHS: Not Compliant Min Qty: 5 Package Multiple: 1 Container: Bulk | 0 |
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$1.9600 / $2.3100 | RFQ |
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Bristol Electronics | Min Qty: 3 | 44 |
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$1.3125 / $2.1000 | Buy Now |
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Ameya Holding Limited | IRFSL3306PBF , N沟道 MOSFET 模块, 160 A, Vds=60 V, 3针 TO-262封装 | 2000 |
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RFQ | |
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DISTI #
SP001568072
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EBV Elektronik | Trans MOSFET N-CH 60V 160A 3-Pin(3+Tab) TO-262 (Alt: SP001568072) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 13 Weeks, 0 Days | EBV - 0 |
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Buy Now | |
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LCSC | 60V 160A 4.2m10V75A 230W 2V150uA 1 N-channel TO-262-3 MOSFETs ROHS | 9 |
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$0.7727 / $1.3083 | Buy Now |
Part Details for IRFSL3306PBF
IRFSL3306PBF CAD Models
IRFSL3306PBF Part Data Attributes
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IRFSL3306PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFSL3306PBF
Infineon Technologies AG
Power Field-Effect Transistor, 160A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 184 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 160 A | |
| Drain-source On Resistance-Max | 0.0042 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 230 W | |
| Pulsed Drain Current-Max (IDM) | 620 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |