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Transistors / Power Field-Effect Transistors / IRFSL7437PBF
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IRFSL7437PBF by:

Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN AND LEAD FREE, PLASTIC, TO-262, 3 PIN

Part Details for IRFSL7437PBF by Infineon Technologies AG

Overview of IRFSL7437PBF by Infineon Technologies AG

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Price & Stock for IRFSL7437PBF

Part # Distributor Description Stock Price Buy
DISTI # 53W9280
Newark Mosfet Transistor, N Channel, 195 A, 40 V, 0.0014 Ohm, 10 V, 3 V Rohs Compliant: Yes |Infineon IRFSL7437PBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 506
  • 1 $2.3300
  • 10 $1.5700
  • 100 $1.4000
  • 500 $1.2700
  • 1,000 $1.1900
  • 3,000 $1.1400
  • 5,000 $1.1100
$1.1100 / $2.3300 Buy Now
DISTI # IRFSL7437PBF-ND
DigiKey MOSFET N-CH 40V 195A TO262 Min Qty: 1 Lead time: 12 Weeks Container: Tube 2740
In Stock
  • 1 $2.0900
  • 50 $1.6810
  • 100 $1.3832
  • 500 $1.1704
  • 1,000 $0.9930
  • 2,000 $0.9434
  • 5,000 $0.9079
  • 10,000 $0.8779
$0.8779 / $2.0900 Buy Now
DISTI # IRFSL7437PBF
Avnet Americas Trans MOSFET N-CH 40V 250A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube (Alt: IRFSL7437PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.9656
  • 1,100 $0.9363
  • 2,100 $0.9071
  • 5,000 $0.8778
  • 10,000 $0.8485
  • 50,000 $0.8193
  • 100,000 $0.7900
$0.7900 / $0.9656 Buy Now
DISTI # 942-IRFSL7437PBF
Mouser Electronics MOSFET 40V, 195A, 1.8 mOhm 150 nC Qg, TO-262 RoHS: Compliant 980
  • 1 $2.0800
  • 10 $1.3200
  • 100 $1.1700
  • 250 $1.1600
  • 500 $1.0500
  • 1,000 $0.9920
  • 2,000 $0.9430
  • 5,000 $0.9070
$0.9070 / $2.0800 Buy Now
DISTI # 70394791
RS IRFSL7437PBF N-channel MOSFET Transistor, 250 A, 40 V, 3-Pin TO-262 | Infineon IRFSL7437PBF RoHS: Not Compliant Min Qty: 400 Package Multiple: 1 Container: Bulk 0
  • 400 $1.6900
  • 2,000 $1.6100
  • 4,000 $1.5200
  • 40,000 $1.4400
  • 100,000 $1.3500
$1.3500 / $1.6900 RFQ
Future Electronics Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0200
  • 200 $0.9750
  • 750 $0.9300
  • 1,500 $0.9100
  • 3,750 $0.8600
$0.8600 / $1.0200 Buy Now
Future Electronics Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262 RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $1.0200
  • 200 $0.9750
  • 750 $0.9300
  • 1,500 $0.9100
  • 3,750 $0.8600
$0.8600 / $1.0200 Buy Now
DISTI # 71240736
Verical Trans MOSFET N-CH Si 40V 250A 3-Pin(3+Tab) TO-262 Tube Min Qty: 9 Package Multiple: 1 Date Code: 2250 Americas - 1135
  • 9 $3.8750
  • 17 $1.8875
  • 50 $1.7250
  • 100 $1.4000
  • 200 $1.3125
  • 500 $1.3000
  • 1,000 $1.1625
$1.1625 / $3.8750 Buy Now
DISTI # 69742051
Verical Trans MOSFET N-CH Si 40V 250A 3-Pin(3+Tab) TO-262 Tube Min Qty: 9 Package Multiple: 1 Date Code: 2251 Americas - 999
  • 9 $1.6021
  • 10 $1.1527
  • 100 $1.0407
  • 500 $0.9604
  • 1,000 $0.8799
  • 3,000 $0.8710
  • 5,000 $0.8285
$0.8285 / $1.6021 Buy Now
Rochester Electronics IRFSL7437 - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 900
  • 1 $1.0200
  • 25 $1.0000
  • 100 $0.9627
  • 500 $0.9218
  • 1,000 $0.8706
$0.8706 / $1.0200 Buy Now
DISTI # IRFSL7437PBF
Avnet Americas Trans MOSFET N-CH 40V 250A 3-Pin(3+Tab) TO-262 Tube - Rail/Tube (Alt: IRFSL7437PBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Container: Tube 0
  • 1,000 $0.9656
  • 1,100 $0.9363
  • 2,100 $0.9071
  • 5,000 $0.8778
  • 10,000 $0.8485
  • 50,000 $0.8193
  • 100,000 $0.7900
$0.7900 / $0.9656 Buy Now
DISTI # IRFSL7437PBF
TME Transistor: N-MOSFET, unipolar, 40V, 180A, Idm: 1kA, 230W, TO262 Min Qty: 1 38
  • 1 $1.4000
  • 3 $1.2600
  • 10 $1.1200
  • 50 $1.0000
  • 250 $0.9300
$0.9300 / $1.4000 Buy Now
Ameya Holding Limited   Min Qty: 5 1000
  • 5 $2.5721
  • 50 $2.0011
  • 100 $1.7999
  • 250 $1.7636
  • 500 $1.6380
$1.6380 / $2.5721 Buy Now
Ameya Holding Limited Single N-Channel 40 V 1.8 mOhm 150 nC HEXFET® Power Mosfet - TO-262 490
RFQ
Chip1Cloud HEXFETPower MOSFET | MOSFET N CH 40V 195A TO-262 17000
RFQ
DISTI # C1S322000519464
Chip1Stop MOSFET RoHS: Compliant Container: Tube 1135
  • 1 $3.1000
  • 10 $1.5100
  • 50 $1.3800
  • 100 $1.1200
  • 200 $1.0500
  • 500 $1.0400
  • 1,000 $0.9300
$0.9300 / $3.1000 Buy Now
DISTI # SP001578458
EBV Elektronik Trans MOSFET N-CH 40V 250A 3-Pin(3+Tab) TO-262 Tube (Alt: SP001578458) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 1 Weeks, 6 Days EBV - 0
Buy Now
DISTI # 2253803
element14 Asia-Pacific MOSFET, N-CH, 40V, 195A, TO-262 RoHS: Compliant Min Qty: 1 Container: Each 506
  • 1 $1.9735
  • 10 $1.3009
  • 100 $1.1309
  • 500 $1.0126
  • 1,000 $0.9017
  • 5,000 $0.8648
$0.8648 / $1.9735 Buy Now
DISTI # 2253803
Farnell MOSFET, N-CH, 40V, 195A, TO-262 RoHS: Compliant Min Qty: 1 Lead time: 13 Weeks, 1 Days Container: Each 506
  • 1 $2.1162
  • 10 $1.2772
  • 100 $1.0769
  • 500 $0.9554
  • 1,000 $0.8502
  • 5,000 $0.8227
$0.8227 / $2.1162 Buy Now

Part Details for IRFSL7437PBF

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IRFSL7437PBF Part Data Attributes:

Parametric Data
IRFSL7437PBF Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IRFSL7437PBF Infineon Technologies AG Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, HALOGEN AND LEAD FREE, PLASTIC, TO-262, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 12 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 802 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 195 A
Drain-source On Resistance-Max 0.0018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-262AA
JESD-30 Code R-PSIP-T3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 1000 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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