Part Details for IRFSL9N60APBF by Vishay Intertechnologies
Overview of IRFSL9N60APBF by Vishay Intertechnologies
- Distributor Offerings: (12 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFSL9N60APBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
63J7029
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Newark | N Channel Mosfet, 600V, 9.2A I2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:9.2A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V, Msl:- Rohs Compliant: Yes |Vishay IRFSL9N60APBF Min Qty: 1000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$1.8700 | Buy Now |
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DISTI #
IRFSL9N60APBF
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Avnet Americas | Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IRFSL9N60APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
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$1.3864 / $1.7613 | Buy Now |
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DISTI #
844-IRFSL9N60APBF
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Mouser Electronics | MOSFET N-Chan 600V 9.2 Amp RoHS: Compliant | 0 |
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$1.2800 / $2.7500 | Order Now |
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Future Electronics | Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.3100 / $1.4400 | Buy Now |
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Future Electronics | Single N-Channel 600 V 0.75 Ohms Through Hole Power Mosfet - I2PAK (TO-262) RoHS: Compliant pbFree: Yes Min Qty: 1000 Package Multiple: 50 Container: Tube | 0Tube |
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$1.3100 / $1.4400 | Buy Now |
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DISTI #
IRFSL9N60APBF
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TTI | MOSFET N-Chan 600V 9.2 Amp RoHS: Compliant pbFree: Pb-Free Min Qty: 1000 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.2800 / $1.3100 | Buy Now |
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DISTI #
IRFSL9N60APBF
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Avnet Americas | Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IRFSL9N60APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
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$1.3864 / $1.7613 | Buy Now |
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DISTI #
IRFSL9N60APBF
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TME | Transistor: N-MOSFET, unipolar, 600V, 9.2A, Idm: 37A, 170W Min Qty: 1 | 0 |
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$1.4800 / $2.2200 | RFQ |
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DISTI #
IRFSL9N60APBF
|
Avnet Americas | Trans MOSFET N-CH 600V 9.2A 3-Pin(3+Tab) TO-262 - Bulk (Alt: IRFSL9N60APBF) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 18 Weeks, 0 Days Container: Bulk | 0 |
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$1.3864 / $1.7613 | Buy Now |
|
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Chip1Cloud | MOSFET N-CH 600V 9.2A TO-262 | 59075 |
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RFQ |
Part Details for IRFSL9N60APBF
IRFSL9N60APBF CAD Models
IRFSL9N60APBF Part Data Attributes:
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IRFSL9N60APBF
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
IRFSL9N60APBF
Vishay Intertechnologies
Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, TO-262, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Part Package Code | TO-262AA | |
| Package Description | IN-LINE, R-PSIP-T3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 18 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Avalanche Energy Rating (Eas) | 290 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 9.2 A | |
| Drain-source On Resistance-Max | 0.75 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-262AA | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 170 W | |
| Pulsed Drain Current-Max (IDM) | 37 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |