Part Details for IRFU1018EPBF by International Rectifier
Overview of IRFU1018EPBF by International Rectifier
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IRFU1018EPBF
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-IRFU1018EPBF-ND
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DigiKey | MOSFET N-CH 60V 56A IPAK Min Qty: 547 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
763 In Stock |
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$0.5500 | Buy Now |
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Rochester Electronics | IRFU1018E - 12V-300V N-Channel Power MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 763 |
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$0.4711 / $0.5542 | Buy Now |
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Component Electronics, Inc | IN STOCK SHIP TODAY | 1125 |
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$2.5000 / $3.8500 | Buy Now |
Part Details for IRFU1018EPBF
IRFU1018EPBF CAD Models
IRFU1018EPBF Part Data Attributes:
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IRFU1018EPBF
International Rectifier
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Datasheet
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IRFU1018EPBF
International Rectifier
Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, IPAK-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-251AA | |
Package Description | LEAD FREE, IPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 88 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 56 A | |
Drain-source On Resistance-Max | 0.0084 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 110 W | |
Pulsed Drain Current-Max (IDM) | 315 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |